Invention Grant
US08852964B2 Controlling CD and CD uniformity with trim time and temperature on a wafer by wafer basis
有权
通过晶片来控制晶片上的CD和CD均匀度以及修整时间和温度
- Patent Title: Controlling CD and CD uniformity with trim time and temperature on a wafer by wafer basis
- Patent Title (中): 通过晶片来控制晶片上的CD和CD均匀度以及修整时间和温度
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Application No.: US13758266Application Date: 2013-02-04
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Publication No.: US08852964B2Publication Date: 2014-10-07
- Inventor: Yoshie Kimura , Tom Kamp , Eric Pape , Rohit DeshPande , Keith Gaff , Gowri Kamarthy
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Buchanan Ingersoll & Rooney PC
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/67 ; H01L21/66

Abstract:
Exemplary embodiments are directed to controlling CD uniformity of a wafer by controlling trim time on temperature in a plasma processing system. The plasma processing system has a wafer support assembly including a plurality of independently controllable temperature control zones across a chuck and a controller that controls each temperature control zone. The controller receives process control and temperature data associated with at least one wafer previously processed in a plasma chamber of the plasma processing system, and critical device parameters of a current wafer to be processed in the plasma chamber. The controller calculates a target trim time and a target temperature profile of the current wafer based on the process control and temperature data, and the critical device parameters. The current wafer is trimmed during the target trim time while the temperature of each device die location is controlled based on the target temperature profile.
Public/Granted literature
- US20140220709A1 CONTROLLING CD AND CD UNIFORMITY WITH TRIM TIME AND TEMPERATURE ON A WAFER BY WAFER BASIS Public/Granted day:2014-08-07
Information query
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