Invention Grant
- Patent Title: Methods for sensing memory elements in semiconductor devices
- Patent Title (中): 用于感测半导体器件中的存储元件的方法
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Application No.: US14076908Application Date: 2013-11-11
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Publication No.: US08854899B2Publication Date: 2014-10-07
- Inventor: Russel J. Baker
- Applicant: Micron Technology Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Fletcher Yoder, P.C.
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C11/56 ; G11C7/16 ; G11C13/00 ; H03M3/00

Abstract:
A memory device that, in certain embodiments, includes a plurality of memory elements connected to a bit-line and a delta-sigma modulator with a digital output and an analog input, which may be connected to the bit-line. In some embodiments, the delta-sigma modulator includes a circuit with first and second inputs and an output. The circuit is configured to combine (add or subtract) input signals. The first input may be connected to the analog input. The delta-sigma modulator may also include an integrator connected to the output of the circuit, an analog-to-digital converter with an input connected to an output of the integrator and an output connected to the digital output, and a digital-to-analog converter with an input connected to the output of the analog-to-digital converter and an output connected to the second input of the circuit.
Public/Granted literature
- US20140078839A1 METHODS FOR SENSING MEMORY ELEMENTS IN SEMICONDUCTOR DEVICES Public/Granted day:2014-03-20
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