发明授权
- 专利标题： Photomask blank, processing method, and etching method
- 专利标题（中）： 光掩模坯料，加工方法和蚀刻方法
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申请号： US12732637申请日： 2010-03-26
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公开(公告)号： US08858814B2公开(公告)日： 2014-10-14
- 发明人: Satoshi Watanabe , Hideo Kaneko , Ryuji Koitabashi , Shinichi Igarashi , Yoshio Kawai , Shozo Shirai
- 申请人： Satoshi Watanabe , Hideo Kaneko , Ryuji Koitabashi , Shinichi Igarashi , Yoshio Kawai , Shozo Shirai
- 申请人地址： JP Tokyo
- 专利权人： Shin-Etsu Chemical Co., Ltd.
- 当前专利权人： Shin-Etsu Chemical Co., Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Birch, Stewart, Kolasch & Birch, LLP
- 优先权： JP2009-078642 20090327
- 主分类号： C23F1/00
- IPC分类号： C23F1/00 ; G03F1/54 ; G03F1/00 ; G03F1/58 ; G03F1/80 ; G03F1/26
摘要：
A photomask blank is provided comprising a transparent substrate, a single or multi-layer film including an outermost layer composed of chromium base material, and an etching mask film. The etching mask film is a silicon oxide base material film formed of a composition comprising a hydrolytic condensate of a hydrolyzable silane, a crosslink promoter, and an organic solvent and having a thickness of 1-10 nm. The etching mask film has high resistance to chlorine dry etching, ensuring high-accuracy processing of the photomask blank.
公开/授权文献
- US20100248493A1 PHOTOMASK BLANK, PROCESSING METHOD, AND ETCHING METHOD 公开/授权日：2010-09-30
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