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公开(公告)号：US08858814B2
公开(公告)日：2014-10-14
申请号：US12732637
申请日：2010-03-26
申请人： Satoshi Watanabe , Hideo Kaneko , Ryuji Koitabashi , Shinichi Igarashi , Yoshio Kawai , Shozo Shirai
发明人： Satoshi Watanabe , Hideo Kaneko , Ryuji Koitabashi , Shinichi Igarashi , Yoshio Kawai , Shozo Shirai
摘要： A photomask blank is provided comprising a transparent substrate, a single or multi-layer film including an outermost layer composed of chromium base material, and an etching mask film. The etching mask film is a silicon oxide base material film formed of a composition comprising a hydrolytic condensate of a hydrolyzable silane, a crosslink promoter, and an organic solvent and having a thickness of 1-10 nm. The etching mask film has high resistance to chlorine dry etching, ensuring high-accuracy processing of the photomask blank.
摘要翻译： 提供一种光掩模坯料，其包括透明基板，包括由铬基材料构成的最外层的单层或多层膜和蚀刻掩模膜。 蚀刻掩模膜是由包含可水解硅烷，交联促进剂和有机溶剂的水解缩合物并且具有1-10nm厚度的组合物形成的氧化硅基底膜。 蚀刻掩模膜具有高耐氯干蚀刻性，确保光掩模坯料的高精度加工。
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2.发明授权Photomask blank and making method, photomask, light pattern exposure method, and design method of transition metal/silicon base material film 有权光掩模坯料和制造方法，光掩模，光图案曝光方法以及过渡金属/硅基材料薄膜的设计方法公开(公告)号：US08475978B2
公开(公告)日：2013-07-02
申请号：US13228501
申请日：2011-09-09
申请人： Hiroki Yoshikawa , Yukio Inazuki , Ryuji Koitabashi , Hideo Kaneko , Takashi Haraguchi , Yosuke Kojima , Tomohito Hirose
发明人： Hiroki Yoshikawa , Yukio Inazuki , Ryuji Koitabashi , Hideo Kaneko , Takashi Haraguchi , Yosuke Kojima , Tomohito Hirose
摘要： A photomask blank has a film of a transition metal/silicon base material comprising a transition metal, silicon, oxygen and nitrogen, having an oxygen content of at least 3 atom %, and satisfying the formula: 4×CSi/100−6×CM/100>1 wherein CSi is a silicon content in atom % and CM is a transition metal content in atom %.
摘要翻译： 光掩模坯料具有包含氧含量为至少3原子％的过渡金属，硅，氧和氮的过渡金属/硅基材的膜，并且满足下式：4×CSi / 100-6×CM 其中CSi是原子％的硅含量，CM是原子％的过渡金属含量。
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3.发明申请PHOTOMASK BLANK AND MAKING METHOD, PHOTOMASK, LIGHT PATTERN EXPOSURE METHOD, AND DESIGN METHOD OF TRANSITION METAL/SILICON BASE MATERIAL FILM 有权光电薄膜和制作方法，光电子图案，光图案曝光方法，以及过渡金属/硅基材料薄膜的设计方法公开(公告)号：US20120064438A1
公开(公告)日：2012-03-15
申请号：US13228501
申请日：2011-09-09
申请人： Hiroki YOSHIKAWA , Yukio Inazuki , Ryuji Koitabashi , Hideo Kaneko , Takashi Haraguchi , Yosuke Kojima , Tomohito Hirose
发明人： Hiroki YOSHIKAWA , Yukio Inazuki , Ryuji Koitabashi , Hideo Kaneko , Takashi Haraguchi , Yosuke Kojima , Tomohito Hirose
摘要： A photomask blank has a film of a transition metal/silicon base material comprising a transition metal, silicon, oxygen and nitrogen, having an oxygen content of at least 3 atom %, and satisfying the formula: 4×CSi/100−6×CM/100>1 wherein CSi is a silicon content in atom % and CM is a transition metal content in atom %.
摘要翻译： 光掩模坯料具有包含氧含量为至少3原子％的过渡金属，硅，氧和氮的过渡金属/硅基材的膜，并且满足下式：4×CSi / 100-6×CM 其中CSi是原子％的硅含量，CM是原子％的过渡金属含量。
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公开(公告)号：US08309277B2
公开(公告)日：2012-11-13
申请号：US12813137
申请日：2010-06-10
IPC分类号： G03F1/50
摘要： A photomask is manufactured from a photomask blank comprising a transparent substrate and a light-shielding film consisting of upper and lower layers of transition metal-containing silicon base materials, the content of O+N in the upper layer being higher than that of the lower layer. The light-shielding film is processed in two steps by fluorine dry etching through a resist pattern such that a lower portion of the film is left behind, and oxygen-containing chlorine dry etching for removing the remainder of the film.
摘要翻译： 光掩模由包括透明基板和由含过渡金属的硅基材料的上层和下层组成的遮光膜的光掩模坯料制造，上层中的O + N的含量高于下层的含量 层。 遮光膜通过氟干蚀刻通过抗蚀剂图案进行两步加工，使得膜的下部留下，并且含氧氯干蚀刻用于除去膜的其余部分。
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公开(公告)号：US08920666B2
公开(公告)日：2014-12-30
申请号：US12779998
申请日：2010-05-14
CPC分类号： G03F1/26 , G03F1/14 , G03F1/30 , G03F1/32 , G03F1/80 , H01L21/31116 , H01L21/31122 , H01L21/31138
摘要： Disclosed herein is a dry etching method for a work layer formed over a substrate, including the steps of forming a hard mask layer over the work layer formed over the substrate, forming a resist pattern over the hard mask layer, transferring the resist pattern to the hard mask layer by first dry etching conducted using the resist pattern, and patterning the work layer by second dry etching conducted using a hard mask pattern obtained upon the transfer to the hard mask layer, wherein after the hard mask layer is patterned by the first dry etching, the patterning of the work layer by the second dry etching is conducted through changing the concentration of an auxiliary ingredient of a dry etching gas, without changing a main ingredient of the dry etching gas, in an etching apparatus in which the first dry etching has been conducted.
摘要翻译： 本文公开了一种用于在衬底上形成的工作层的干式蚀刻方法，包括以下步骤：在形成在衬底上的工作层上形成硬掩模层，在硬掩模层上形成抗蚀剂图案，将抗蚀剂图案转移到 硬掩模层，通过使用抗蚀剂图案进行的第一干蚀刻，以及通过使用在转印到硬掩模层上获得的硬掩模图案进行的第二干蚀刻来对工作层进行图案化，其中在硬掩模层通过第一干法 蚀刻时，通过在蚀刻装置中改变干蚀刻气体的辅助成分的浓度而不改变干蚀刻气体的主要成分，通过第二干蚀刻进行工作层的图案化，其中第一干蚀刻 已经进行。
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公开(公告)号：US20100291478A1
公开(公告)日：2010-11-18
申请号：US12779998
申请日：2010-05-14
CPC分类号： G03F1/26 , G03F1/14 , G03F1/30 , G03F1/32 , G03F1/80 , H01L21/31116 , H01L21/31122 , H01L21/31138
摘要： Disclosed herein is a dry etching method for a work layer formed over a substrate, including the steps of forming a hard mask layer over the work layer formed over the substrate, forming a resist pattern over the hard mask layer, transferring the resist pattern to the hard mask layer by first dry etching conducted using the resist pattern, and patterning the work layer by second dry etching conducted using a hard mask pattern obtained upon the transfer to the hard mask layer, wherein after the hard mask layer is patterned by the first dry etching, the patterning of the work layer by the second dry etching is conducted through changing the concentration of an auxiliary ingredient of a dry etching gas, without changing a main ingredient of the dry etching gas, in an etching apparatus in which the first dry etching has been conducted.
摘要翻译： 本文公开了一种用于在衬底上形成的工作层的干式蚀刻方法，包括以下步骤：在形成在衬底上的工作层上形成硬掩模层，在硬掩模层上形成抗蚀剂图案，将抗蚀剂图案转移到 硬掩模层，通过使用抗蚀剂图案进行的第一干蚀刻，以及通过使用在转印到硬掩模层上获得的硬掩模图案进行的第二干蚀刻来对工作层进行图案化，其中在硬掩模层通过第一干法 蚀刻时，通过在蚀刻装置中改变干蚀刻气体的辅助成分的浓度而不改变干蚀刻气体的主要成分，通过第二干蚀刻进行工作层的图案化，其中第一干蚀刻 已经进行。
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公开(公告)号：US08304146B2
公开(公告)日：2012-11-06
申请号：US12687539
申请日：2010-01-14
IPC分类号： G03F1/26
摘要： A photomask is manufactured by providing a photomask blank comprising a transparent substrate, a phase shift film, and a light-shielding film, the phase shift film and the light-shielding film including silicon base material layers, a N+O content in the silicon base material layer of the phase shift film differing from that of the light-shielding film, and chlorine dry etching the blank with oxygen-containing chlorine gas in a selected O/Cl ratio for selectively etching away the silicon base material layer of the light-shielding film.
摘要翻译： 通过提供包括透明基板，相移膜和遮光膜的光掩模坯料制造光掩模，所述相移膜和所述遮光膜包括硅基材料层，所述硅中的N + O含量 所述相移膜的基材层与所述遮光膜的基材层不同，并且以选择的O / Cl比例用含氧氯气对所述毛坯进行氯干蚀刻，以选择性地蚀刻所述发光元件的硅基材层， 屏蔽膜。
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公开(公告)号：US20100176087A1
公开(公告)日：2010-07-15
申请号：US12687539
申请日：2010-01-14
摘要： A photomask is manufactured by providing a photomask blank comprising a transparent substrate, a phase shift film, and a light-shielding film, the phase shift film and the light-shielding film including silicon base material layers, a N+O content in the silicon base material layer of the phase shift film differing from that of the light-shielding film, and chlorine dry etching the blank with oxygen-containing chlorine gas in a selected O/C1 ratio for selectively etching away the silicon base material layer of the light-shielding film.
摘要翻译： 通过提供包括透明基板，相移膜和遮光膜的光掩模坯料制造光掩模，所述相移膜和所述遮光膜包括硅基材料层，所述硅中的N + O含量 所述相移膜的基材层与所述遮光膜的基材层不同，并且以选择的O / C1比对含有氧的氯气对所述坯料进行氯干蚀刻，以选择性地蚀刻所述发光元件的硅基材层， 屏蔽膜。
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9.发明授权Sputtering target material, silicon-containing film forming method, and photomask blank 有权溅射靶材料，含硅膜形成方法和光掩模坯料公开(公告)号：US08647795B2
公开(公告)日：2014-02-11
申请号：US13273656
申请日：2011-10-14
申请人： Hideo Kaneko , Yokio Inazuki , Hiroki Yoshikawa
发明人： Hideo Kaneko , Yokio Inazuki , Hiroki Yoshikawa
CPC分类号： C23C14/3414 , C23C14/0036 , C23C14/0676 , C23C14/564 , G03F1/54
摘要： Provided is a silicon target material in which particles are not easily generated during a sputtering process and to form a low-defect (high quality) silicon-containing film. A silicon target material having a specific resistance of 20 Ω·cm or more at room temperature is used for forming a silicon-containing film. The silicon target material may be polycrystalline or noncrystalline. However, when the silicon target material is single-crystalline, a more stable discharge state can be obtained. Also, a single-crystal silicon in which crystals are grown by an FZ method is a preferable material as a highly-pure silicon target material because its content of oxygen is low. Further, a target material having n-type conductivity and containing donor impurities is preferable to obtain stable discharge characteristics. Only a single or a plurality of silicon target materials according to the present invention may be used for sputtering film formation of the silicon-containing film.
摘要翻译： 提供了一种硅靶材料，其中在溅射工艺期间不容易产生颗粒并形成低缺陷（高质量）含硅膜。 使用在室温下电阻率为20Ω·cm以上的硅靶材料来形成含硅膜。 硅靶材料可以是多晶的或非晶的。 然而，当硅靶材料是单晶时，可以获得更稳定的放电状态。 此外，由于其含氧量低，因此通过FZ法生长晶体的单晶硅是优选的高纯度硅靶材料。 此外，优选具有n型导电性且含有供体杂质的靶材料，以获得稳定的放电特性。 根据本发明，只有一种或多种硅靶材料可用于溅射含硅膜的成膜。
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10.发明授权Method for inspecting photomask blank or intermediate thereof, method for determining dosage of high-energy radiation, and method for manufacturing photomask blank 有权检查光掩模坯料或其中间体的方法，用于确定高能辐射剂量的方法，以及制造光掩模坯料的方法公开(公告)号：US08168351B2
公开(公告)日：2012-05-01
申请号：US12750121
申请日：2010-03-30
申请人： Yukio Inazuki , Hideo Kaneko , Hiroki Yoshikawa
发明人： Yukio Inazuki , Hideo Kaneko , Hiroki Yoshikawa
CPC分类号： G03F1/84 , G03F7/70783
摘要： A photomask blank which is manufactured by depositing a phase shift film on a substrate and irradiating the phase shift film with high-energy radiation to effect substrate shape adjusting treatment is inspected by measuring a surface topography of the photomask blank after the substrate shape adjusting treatment, removing the phase shift film from the photomask blank, measuring a surface topography of the treated substrate after removal of the phase shift film, and comparing the surface topographies, thereby evaluating a warpage change before and after removal of the phase shift film, due to a stress of the phase shift film having undergone substrate shape adjusting treatment.
摘要翻译： 通过在基板形状调整处理之后测量光掩模坯料的表面形貌来检查通过在基板上沉积相变膜并用高能辐射照射相移膜来进行基板形状调整处理而制造的光掩模坯料， 从光掩模坯料中去除相移膜，在移除相移膜之后测量处理过的基板的表面形貌，并比较表面形貌，由此评估在移相膜之前和之后的翘曲变化，由于 经过衬底形状调整处理的相移膜的应力。
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