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1.发明申请ELECTRIC WIRE PROTECTION STRUCTURE AND METHOD FOR MANUFACTURING ELECTRIC WIRE PROTECTION STRUCTURE 审中-公开电线保护结构及制造电线保护结构的方法公开(公告)号：US20130098660A1
公开(公告)日：2013-04-25
申请号：US13808389
申请日：2011-06-01
申请人： Shinichi Igarashi , Nobumasa Takihara , Yukihiro Shirafuji , Atsushi Murata , Osamu Satou , Satoshi Tanigawa , Masamichi Yamagiwa
发明人： Shinichi Igarashi , Nobumasa Takihara , Yukihiro Shirafuji , Atsushi Murata , Osamu Satou , Satoshi Tanigawa , Masamichi Yamagiwa
CPC分类号： H01B7/0045 , H01B19/00 , H02G3/0481 , Y10T156/10
摘要： An electric wire protection structure has a structure in which a branch portion of an electric wire bundle is protected. In the electric wire protection structure, a protection portion covers the branch portion of the electric wire bundle, the protection portion being formed by heating and compressing a thermoplastic material in a state of covering at least the branch portion of the electric wire bundle.
摘要翻译： 电线保护结构具有保护电线束的分支部分的结构。 在电线保护结构中，保护部分覆盖电线束的分支部分，保护部分通过在至少覆盖电线束的分支部分的状态下加热和压缩热塑性材料而形成。
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公开(公告)号：US20130005171A1
公开(公告)日：2013-01-03
申请号：US13634626
申请日：2010-10-18
申请人： Shinichi Igarashi
发明人： Shinichi Igarashi
IPC分类号： H01R13/62 , H01R13/648
CPC分类号： H01R13/5845 , H01R13/405 , H01R43/18
摘要： A connector fixing structure includes a connector provided at one end of an electric wire, a protector surrounding a portion of the electric wire, and a fixing portion integrally formed with the protector and fixating the connector. The protector and the fixing portion are formed of a protection material that includes a base material and a binder material having a melting point lower than that of the base material. The protector and the fixing portion are joined at each joint portion by cooling and solidifying the melted binder material.
摘要翻译： 连接器固定结构包括设置在电线的一端的连接器，围绕电线的一部分的保护器以及与保护器一体形成并固定连接器的固定部。 保护器和固定部由保护材料形成，该保护材料包括熔点低于基材的熔点的基材和粘合剂材料。 通过冷却固化熔融的粘合剂材料，在每个接合部分处将保护器和固定部分接合。
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公开(公告)号：US20130000974A1
公开(公告)日：2013-01-03
申请号：US13583729
申请日：2010-10-22
申请人： Shinichi Igarashi , Atsushi Murata , Osamu Satou , Hiroaki Masuda , Nobumasa Takihara , Yukihiro Shirafuji , Yasushi Atsumi
发明人： Shinichi Igarashi , Atsushi Murata , Osamu Satou , Hiroaki Masuda , Nobumasa Takihara , Yukihiro Shirafuji , Yasushi Atsumi
CPC分类号： H02G3/0487 , B60R16/0215 , Y10T156/10
摘要： A wire harness includes a bundle of electric wires and a protector protecting the bundle of electric wires by extending in a longitudinal direction of the bundle of electric wires and surrounding a portion thereof. The protector includes a base material and a binder material having a lower melting point than the base material, the protector being joined in a joint portion thereof by cooling and solidifying the melted binder material. In a case where a first side portion and a second side portion are each provided as a portion along the longitudinal direction in an outer peripheral surface of the protector and the second side portion is disposed opposite the first side portion with the bundle of electric wires therebetween, a portion of the binder material in each of the first side portion and the second side portion is melted, cooled, and solidified such that the second side portion is harder than the first side portion.
摘要翻译： 线束包括一束电线和保护器，其通过在电线束的纵向方向上延伸并围绕其一部分来保护电线束。 保护器包括具有比基材低的熔点的基材和粘合剂材料，通过冷却和固化熔融的粘合剂材料将保护剂接合在其接合部分中。 在第一侧部分和第二侧部分分别设置在保护器的外周面中的沿着纵向方向的部分，并且第二侧部与第一侧部相对设置，并且电线束彼此之间 在第一侧部分和第二侧部分中的每一个中的粘合剂材料的一部分被熔化，冷却和固化，使得第二侧部比第一侧部更硬。
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公开(公告)号：US08309277B2
公开(公告)日：2012-11-13
申请号：US12813137
申请日：2010-06-10
IPC分类号： G03F1/50
摘要： A photomask is manufactured from a photomask blank comprising a transparent substrate and a light-shielding film consisting of upper and lower layers of transition metal-containing silicon base materials, the content of O+N in the upper layer being higher than that of the lower layer. The light-shielding film is processed in two steps by fluorine dry etching through a resist pattern such that a lower portion of the film is left behind, and oxygen-containing chlorine dry etching for removing the remainder of the film.
摘要翻译： 光掩模由包括透明基板和由含过渡金属的硅基材料的上层和下层组成的遮光膜的光掩模坯料制造，上层中的O + N的含量高于下层的含量 层。 遮光膜通过氟干蚀刻通过抗蚀剂图案进行两步加工，使得膜的下部留下，并且含氧氯干蚀刻用于除去膜的其余部分。
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公开(公告)号：US20100316942A1
公开(公告)日：2010-12-16
申请号：US12813137
申请日：2010-06-10
IPC分类号： G03F1/00
摘要： A photomask is manufactured from a photomask blank comprising a transparent substrate and a light-shielding film consisting of upper and lower layers of transition metal-containing silicon base materials, the content of O+N in the upper layer being higher than that of the lower layer. The light-shielding film is processed in two steps by fluorine dry etching through a resist pattern such that a lower portion of the film is left behind, and oxygen-containing chlorine dry etching for removing the remainder of the film.
摘要翻译： 光掩模由包括透明基板和由含过渡金属的硅基材料的上层和下层组成的遮光膜的光掩模坯料制造，上层中的O + N的含量高于下层的含量 层。 遮光膜通过氟干蚀刻通过抗蚀剂图案进行两步加工，使得膜的下部留下，并且含氧氯干蚀刻用于除去膜的其余部分。
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公开(公告)号：US08920666B2
公开(公告)日：2014-12-30
申请号：US12779998
申请日：2010-05-14
CPC分类号： G03F1/26 , G03F1/14 , G03F1/30 , G03F1/32 , G03F1/80 , H01L21/31116 , H01L21/31122 , H01L21/31138
摘要： Disclosed herein is a dry etching method for a work layer formed over a substrate, including the steps of forming a hard mask layer over the work layer formed over the substrate, forming a resist pattern over the hard mask layer, transferring the resist pattern to the hard mask layer by first dry etching conducted using the resist pattern, and patterning the work layer by second dry etching conducted using a hard mask pattern obtained upon the transfer to the hard mask layer, wherein after the hard mask layer is patterned by the first dry etching, the patterning of the work layer by the second dry etching is conducted through changing the concentration of an auxiliary ingredient of a dry etching gas, without changing a main ingredient of the dry etching gas, in an etching apparatus in which the first dry etching has been conducted.
摘要翻译： 本文公开了一种用于在衬底上形成的工作层的干式蚀刻方法，包括以下步骤：在形成在衬底上的工作层上形成硬掩模层，在硬掩模层上形成抗蚀剂图案，将抗蚀剂图案转移到 硬掩模层，通过使用抗蚀剂图案进行的第一干蚀刻，以及通过使用在转印到硬掩模层上获得的硬掩模图案进行的第二干蚀刻来对工作层进行图案化，其中在硬掩模层通过第一干法 蚀刻时，通过在蚀刻装置中改变干蚀刻气体的辅助成分的浓度而不改变干蚀刻气体的主要成分，通过第二干蚀刻进行工作层的图案化，其中第一干蚀刻 已经进行。
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公开(公告)号：US08497426B2
公开(公告)日：2013-07-30
申请号：US13521899
申请日：2011-04-26
申请人： Osamu Sato , Atsushi Murata , Makoto Kamiya , Satoshi Tanigawa , Shinichi Igarashi , Nobumasa Takihara , Yukihiro Shirafuji , Masamichi Yamagiwa , Yutaka Takata , Hiroto Ueno
发明人： Osamu Sato , Atsushi Murata , Makoto Kamiya , Satoshi Tanigawa , Shinichi Igarashi , Nobumasa Takihara , Yukihiro Shirafuji , Masamichi Yamagiwa , Yutaka Takata , Hiroto Ueno
IPC分类号： H02G3/04
CPC分类号： H02G3/0481 , D04H1/435 , D04H1/541
摘要： A wire harness has an exterior component (11a) that covers a certain part of at least one wires (12). The exterior component (11a) has parts having different hardness, including a relatively hard first part (111a), a relatively soft second part (112a), and a third part (113a) having an intermediate hardness between that of the first parts (111a, 112a). The first part is formed on a surface of the exterior component and functions as a shape keeping member and a protector. The second and third parts (112a, 113a) surround the certain part of the at least one wire 12 and each functions as a cushioning material and a muffler/soundproofing material. The first part (111a), the second part (112a), and the third part (113a) are formed integrally from a non-woven fabric (2) with thermo plasticity.
摘要翻译： 线束具有覆盖至少一根线（12）的某一部分的外部部件（11a）。 外部部件（11a）具有不同硬度的部件，包括相对较硬的第一部分（111a），较软的第二部分（112a）和第三部分（113a），其具有在第一部分 ，112a）。 第一部分形成在外部部件的表面上并用作形状保持部件和保护件。 第二和第三部分（112a，113a）围绕至少一根线12的某一部分，并且各自用作缓冲材料和消声器/隔音材料。 第一部分（111a），第二部分（112a）和第三部分（113a）由热塑性的无纺布（2）整体形成。
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公开(公告)号：US20100291478A1
公开(公告)日：2010-11-18
申请号：US12779998
申请日：2010-05-14
CPC分类号： G03F1/26 , G03F1/14 , G03F1/30 , G03F1/32 , G03F1/80 , H01L21/31116 , H01L21/31122 , H01L21/31138
摘要： Disclosed herein is a dry etching method for a work layer formed over a substrate, including the steps of forming a hard mask layer over the work layer formed over the substrate, forming a resist pattern over the hard mask layer, transferring the resist pattern to the hard mask layer by first dry etching conducted using the resist pattern, and patterning the work layer by second dry etching conducted using a hard mask pattern obtained upon the transfer to the hard mask layer, wherein after the hard mask layer is patterned by the first dry etching, the patterning of the work layer by the second dry etching is conducted through changing the concentration of an auxiliary ingredient of a dry etching gas, without changing a main ingredient of the dry etching gas, in an etching apparatus in which the first dry etching has been conducted.
摘要翻译： 本文公开了一种用于在衬底上形成的工作层的干式蚀刻方法，包括以下步骤：在形成在衬底上的工作层上形成硬掩模层，在硬掩模层上形成抗蚀剂图案，将抗蚀剂图案转移到 硬掩模层，通过使用抗蚀剂图案进行的第一干蚀刻，以及通过使用在转印到硬掩模层上获得的硬掩模图案进行的第二干蚀刻来对工作层进行图案化，其中在硬掩模层通过第一干法 蚀刻时，通过在蚀刻装置中改变干蚀刻气体的辅助成分的浓度而不改变干蚀刻气体的主要成分，通过第二干蚀刻进行工作层的图案化，其中第一干蚀刻 已经进行。
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公开(公告)号：US20100248493A1
公开(公告)日：2010-09-30
申请号：US12732637
申请日：2010-03-26
IPC分类号： H01L21/308 , G03F1/00
摘要： A photomask blank is provided comprising a transparent substrate, a single or multi-layer film including an outermost layer composed of chromium base material, and an etching mask film. The etching mask film is a silicon oxide base material film formed of a composition comprising a hydrolytic condensate of a hydrolyzable silane, a crosslink promoter, and an organic solvent and having a thickness of 1-10 nm. The etching mask film has high resistance to chlorine dry etching, ensuring high-accuracy processing of the photomask blank.
摘要翻译： 提供一种光掩模坯料，其包括透明基板，包括由铬基材料构成的最外层的单层或多层膜和蚀刻掩模膜。 蚀刻掩模膜是由包含可水解硅烷，交联促进剂和有机溶剂的水解缩合物并且具有1-10nm厚度的组合物形成的氧化硅基底膜。 蚀刻掩模膜具有高耐氯干蚀刻性，确保光掩模坯料的高精度加工。
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10.发明申请公开(公告)号：US20060211258A1
公开(公告)日：2006-09-21
申请号：US10566158
申请日：2004-07-27
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： G11B5/127
摘要： A novel two-dimensional patterning method enabling two-dimension patterning without using any photosensitive material and ion milling, wherein a two-dimensional pattern is formed by destroying a blister provided on a substrate by electron or ion irradiation.
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