发明授权
US08865522B2 Method for manufacturing semiconductor devices having a glass substrate
有权
具有玻璃基板的半导体器件的制造方法
- 专利标题： Method for manufacturing semiconductor devices having a glass substrate
- 专利标题（中）： 具有玻璃基板的半导体器件的制造方法
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申请号： US13865579申请日： 2013-04-18
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公开(公告)号： US08865522B2公开(公告)日： 2014-10-21
- 发明人: Carsten von Koblinski , Gerald Lackner , Karin Schrettlinger , Markus Ottowitz
- 申请人： Infineon Technologies Austria AG
- 申请人地址： AT Villach
- 专利权人： Infineon Technologies Austria AG
- 当前专利权人： Infineon Technologies Austria AG
- 当前专利权人地址： AT Villach
- 代理机构： Dicke, Billig & Czaja, PLLC
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/30 ; H01L23/12 ; H01L23/06 ; H01L23/495 ; H01L21/56 ; H01L23/00 ; H01L23/31 ; H01L21/78 ; H01L29/78 ; H01L29/861
摘要：
A method for connecting a semiconductor chip to a metal layer of a carrier substrate is disclosed. A semiconductor chip is provided which has a first side, a second side opposite the first side, a glass substrate bonded to the second side of the semiconductor chip and including at least one opening leaving an area of the second side of the semiconductor chip uncovered by the glass substrate, and a metallization region arranged in the opening of the glass substrate and electrically contacting the second side of the semiconductor chip. The semiconductor chip with the bonded glass substrate is brought onto a metal layer of a carrier substrate. A firm mechanical and electrical connection is formed between the metal layer of the carrier substrate and the metallization region.
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