发明授权
- 专利标题： Semiconductor device and method for manufacturing same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US14009628申请日： 2012-03-29
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公开(公告)号： US08866158B2公开(公告)日： 2014-10-21
- 发明人: Kenji Hamada , Tsuyoshi Kawakami
- 申请人： Kenji Hamada , Tsuyoshi Kawakami
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2011-082386 20110404
- 国际申请： PCT/JP2012/058375 WO 20120329
- 国际公布： WO2012/137659 WO 20121011
- 主分类号： H01L29/15
- IPC分类号： H01L29/15 ; H01L29/16 ; H01L21/04 ; H01L29/66 ; H01L29/06 ; H01L29/861 ; H01L29/739 ; H01L29/78 ; H01L29/08 ; H01L29/872
摘要：
A semiconductor device having a high withstand voltage in which a stable withstand voltage can be obtained and a method for manufacturing the same. A JTE region having a second conductivity type is formed in a port ion on an outer peripheral end side of an SiC substrate from a second conductivity type SiC region in a vicinal portion of a surface on one of sides in a thickness direction of a first conductivity type SiC epitaxial layer. A first conductivity type SiC region having a higher concentration of an impurity having the first conductivity type than that of the SiC epitaxial layer is formed in at least a vicinal portion of a surface on one of sides in a thickness direction of a portion in which the JTE regions are bonded to each other.
公开/授权文献
- US20140021489A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 公开/授权日：2014-01-23
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