发明授权
- 专利标题: Device with gaps for capacitance reduction
- 专利标题(中): 具有间隙的器件,用于降低电容
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申请号: US13457147申请日: 2012-04-26
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公开(公告)号: US08866202B2公开(公告)日: 2014-10-21
- 发明人: S. M. Reza Sadjadi , Zhi-Song Huang
- 申请人: S. M. Reza Sadjadi , Zhi-Song Huang
- 申请人地址: US CA Fremont
- 专利权人: Lam Research Corporation
- 当前专利权人: Lam Research Corporation
- 当前专利权人地址: US CA Fremont
- 代理机构: Beyer Law Group LLP
- 主分类号: H01L21/70
- IPC分类号: H01L21/70 ; H01L23/48 ; H01L23/52 ; H01L21/768 ; H01L23/482 ; H01L21/033 ; H01L21/311
摘要:
A method for reducing capacitances between semiconductor devices is provided. A plurality of contact structures is formed in a dielectric layer. A mask is formed to cover the contact structures wherein the mask has mask features for exposing parts of the dielectric layer wherein the mask features have widths. The widths of the mask features are shrunk with a sidewall deposition. Gaps are etched into the dielectric layer through the sidewall deposition. The gaps are closed to form pockets in the gaps.
公开/授权文献
- US20120205819A1 DEVICE WITH GAPS FOR CAPACITANCE REDUCTION 公开/授权日:2012-08-16