Invention Grant
- Patent Title: Three-dimensional semiconductor memory devices and methods of fabricating the same
- Patent Title (中): 三维半导体存储器件及其制造方法
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Application No.: US13796118Application Date: 2013-03-12
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Publication No.: US08872256B2Publication Date: 2014-10-28
- Inventor: Juyul Lee , Bumsu Kim , Kwangmin Park , Hyun Park , Jae-Young Ahn , Dongchul Yoo , Jongsik Chun , Kihyun Hwang
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2012-0039151 20120416
- Main IPC: H01L27/105
- IPC: H01L27/105
Abstract:
A three-dimensional (3D) semiconductor memory device includes an electrode separation pattern, a stack structure, a data storage layer, and a channel structure. The electrode separation pattern is disposed on a substrate. A stack structure is disposed on a sidewall of the electrode separation pattern. The stack structure includes a corrugated sidewall opposite to the sidewall of the electrode separation pattern. The sidewall of the electrode separation pattern is vertical to the substrate. A data storage layer is disposed on the corrugated sidewall. A channel structure is disposed on the charge storage layer.
Public/Granted literature
- US20130270643A1 THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME Public/Granted day:2013-10-17
Information query
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