发明授权
- 专利标题： Methods of manufacturing semiconductor devices and optical proximity correction
- 专利标题（中）： 制造半导体器件的方法和光学邻近校正
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申请号： US13480317申请日： 2012-05-24
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公开(公告)号： US08877650B2公开(公告)日： 2014-11-04
- 发明人: O Seo Park , Wai-Kin Li
- 申请人： O Seo Park , Wai-Kin Li
- 申请人地址： US NY Armonk DE Neubiberg
- 专利权人： International Business Machines Corporation,Infineon Technologies AG
- 当前专利权人： International Business Machines Corporation,Infineon Technologies AG
- 当前专利权人地址： US NY Armonk DE Neubiberg
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/311 ; H01L21/66 ; G03F1/36 ; G03F1/00
摘要：
Methods of manufacturing semiconductor devices and methods of optical proximity correction methods are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes determining an amount of reactive ion etch (RIE) lag of a RIE process for a material layer of the semiconductor device, and adjusting a size of at least one pattern for a feature of the material layer by an adjustment amount to partially compensate for the amount of RIE lag determined.
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