发明授权
- 专利标题: Perovskite manganese oxide thin film and manufacturing method therefor
- 专利标题(中): 钙钛矿型锰氧化物薄膜及其制造方法
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申请号: US13817127申请日: 2011-11-28
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公开(公告)号: US08878322B2公开(公告)日: 2014-11-04
- 发明人: Yasushi Ogimoto
- 申请人: Yasushi Ogimoto
- 申请人地址: JP Kawasaki-shi
- 专利权人: Fuji Electric Co., Ltd.
- 当前专利权人: Fuji Electric Co., Ltd.
- 当前专利权人地址: JP Kawasaki-shi
- 代理机构: Rabin & Berdo, P.C.
- 优先权: JP2010-274170 20101209
- 国际申请: PCT/JP2011/077356 WO 20111128
- 国际公布: WO2012/077518 WO 20120614
- 主分类号: H01L29/82
- IPC分类号: H01L29/82 ; H01L43/10 ; H01L45/00 ; C23C14/08 ; C23C14/28 ; C30B29/22 ; C30B23/06 ; H01L43/12
摘要:
A perovskite manganese oxide thin film formed on a substrate that allows a first order phase transition and has A-site ordering. The thin film contains Ba and a rare earth element in the A sites of a perovskite crystal lattice and has an (m10) orientation for which m=2n, and 9≧n≧1. A method for manufacturing the film includes forming in a controlled atmosphere using laser ablation an atomic layer or thin film that assumes a pyramidal structure having oxygen-deficient sites in a plane containing the rare earth element and oxygen; and filling the oxygen-deficient sites with oxygen. The controlled atmosphere has an oxygen partial pressure controlled to a thermodynamically required value for creating oxygen deficiencies and contains a gas other than oxygen, and has a total pressure that is controlled to a value at which the A sites have a fixed compositional ratio.