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    Perovskite manganese oxide thin film and manufacturing method therefor
    1.
    发明授权
    Perovskite manganese oxide thin film and manufacturing method therefor 有权
    钙钛矿型锰氧化物薄膜及其制造方法

    公开(公告)号：US08878322B2

    公开(公告)日：2014-11-04

    申请号：US13817127

    申请日：2011-11-28

    申请人： Yasushi Ogimoto

    发明人： Yasushi Ogimoto

    IPC分类号： H01L29/82 ,  H01L43/10 ,  H01L45/00 ,  C23C14/08 ,  C23C14/28 ,  C30B29/22 ,  C30B23/06 ,  H01L43/12

    CPC分类号： H01L43/10 ,  C23C14/08 ,  C23C14/28 ,  C30B23/066 ,  C30B29/22 ,  H01L43/12 ,  H01L45/04 ,  H01L45/147 ,  H01L45/1625 ,  Y10T428/1259 ,  Y10T428/265

    摘要： A perovskite manganese oxide thin film formed on a substrate that allows a first order phase transition and has A-site ordering. The thin film contains Ba and a rare earth element in the A sites of a perovskite crystal lattice and has an (m10) orientation for which m=2n, and 9≧n≧1. A method for manufacturing the film includes forming in a controlled atmosphere using laser ablation an atomic layer or thin film that assumes a pyramidal structure having oxygen-deficient sites in a plane containing the rare earth element and oxygen; and filling the oxygen-deficient sites with oxygen. The controlled atmosphere has an oxygen partial pressure controlled to a thermodynamically required value for creating oxygen deficiencies and contains a gas other than oxygen, and has a total pressure that is controlled to a value at which the A sites have a fixed compositional ratio.

    摘要翻译： 形成在基板上的钙钛矿锰氧化物薄膜，其允许一阶相变并具有A位点排序。 该薄膜在钙钛矿晶格的A位置含有Ba和稀土元素，并且具有m = 2n，且9≥n≥1的（m10）取向。 制造薄膜的方法包括在受控气氛中使用激光烧蚀来形成在含有稀土元素和氧的平面中具有缺氧部位的金字塔形结构的原子层或薄膜; 并用氧填充缺氧部位。 受控气氛的氧分压被控制成用于产生氧缺乏的热力学要求值并且包含除氧之外的气体，并且具有被控制为A位置具有固定组成比的值的总压力。

    CRYSTALLINE SUBSTANCE, SUBSTRATE, AND METHOD FOR PRODUCING CRYSTALLINE SUBSTANCE
    2.
    发明申请
    CRYSTALLINE SUBSTANCE, SUBSTRATE, AND METHOD FOR PRODUCING CRYSTALLINE SUBSTANCE 有权
    晶体物质，基板和生产晶体物质的方法

    公开(公告)号：US20130337228A1

    公开(公告)日：2013-12-19

    申请号：US14002587

    申请日：2012-03-02

    申请人： Yasushi Ogimoto

    发明人： Yasushi Ogimoto

    IPC分类号： C30B1/04 ,  C30B29/32

    CPC分类号： C30B1/04 ,  B82Y30/00 ,  C01P2002/34 ,  C04B2235/768 ,  C30B29/32 ,  C30B33/02 ,  H01L21/02197 ,  Y10T428/24355

    摘要： The present invention provides a crystalline substance that has an uneven structure extending along the direction of a crystal axis. An aspect of the present invention provides a crystalline substance 1, which has a surface 10L that exposes an oxide crystal thereon and extends in a direction of a crystal axis of the oxide crystal, wherein the surface 10L has an uneven structure that is configured by faces 11L to 14L extending in at least three orientations along the crystal axis.

    摘要翻译： 本发明提供了具有沿着晶轴方向延伸的不均匀结构的结晶物质。 本发明的一个方面提供了一种结晶物质1，其具有在其上暴露氧化物晶体并在氧化物晶体的晶轴方向上延伸的表面10L，其中表面10L具有由面部构成的不均匀结构 11L至14L沿着晶轴至少沿三个取向延伸。

    Magnetoresistance element and storage device using the same
    3.
    发明授权
    Magnetoresistance element and storage device using the same 有权
    磁阻元件及使用其的存储装置

    公开(公告)号：US08456896B2

    公开(公告)日：2013-06-04

    申请号：US13165782

    申请日：2011-06-21

    申请人： Michiya Yamada ,  Yasushi Ogimoto

    发明人： Michiya Yamada ,  Yasushi Ogimoto

    IPC分类号： G11C11/00

    CPC分类号： H01L43/08 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1659 ,  H01F10/126 ,  H01F10/325 ,  H01F10/3254 ,  H01F10/3286 ,  H01L27/224 ,  H01L43/10 ,  H01L43/12

    摘要： A magnetic memory element having a memory cell of size 4F2 is provided that realizes a crosspoint-type memory. In the magnetic memory element, a first magnetic layer, a third magnetic layer (spin polarization enhancement layer), an intermediate layer, a fourth magnetic layer (spin polarization enhancement layer), and a second magnetic layer are stacked in order. The intermediate layer is made of an insulating material or a nonmagnetic material. The second magnetic layer is composed of a ternary alloy of gadolinium, iron and cobalt, a binary alloy of gadolinium and cobalt, or a binary alloy of terbium and cobalt. Alternatively, the first magnetic layer is composed of a ternary alloy of terbium, iron and cobalt, or a binary alloy of terbium and cobalt.

    摘要翻译： 提供具有尺寸为4F2的存储单元的磁存储元件，其实现交叉点型存储器。 在磁存储元件中，按顺序堆叠第一磁性层，第三磁性层（自旋极化增强层），中间层，第四磁性层（自旋极化增强层）和第二磁性层。 中间层由绝缘材料或非磁性材料制成。 第二磁性层由钆，铁和钴的三元合金，钆和钴的二元合金或铽和钴的二元合金组成。 或者，第一磁性层由铽，铁和钴的三元合金或铽和钴的二元合金构成。

    SPIN-VALVE RECORDING ELEMENT AND STORAGE DEVICE
    5.
    发明申请
    SPIN-VALVE RECORDING ELEMENT AND STORAGE DEVICE 有权
    旋转阀记录元件和存储装置

    公开(公告)号：US20110143166A1

    公开(公告)日：2011-06-16

    申请号：US12737118

    申请日：2008-09-05

    申请人： Haruo Kawakami ,  Yasushi Ogimoto

    发明人： Haruo Kawakami ,  Yasushi Ogimoto

    IPC分类号： G11B5/66

    CPC分类号： H01L43/08 ,  B82Y25/00 ,  G01R33/093 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/5607 ,  G11C19/0808 ,  H01F10/325 ,  H01F10/3254 ,  H01F10/3286 ,  Y10T428/1107 ,  Y10T428/1143

    摘要： A spin-valve element has a pair of ferromagnetic layers having mutually different coercive forces, sandwiching an insulating layer or a nonmagnetic layer therebetween. The in-plane shape of the spin-valve element is substantially circular in shape but is provided, in the peripheral portion, with a plurality of cutouts NS, NW, NE, NN. Preferably, the shape of at least one cutout be made different from that of others. Moreover, a storage device that employs such a spin-valve element is provided.

    摘要翻译： 自旋阀元件具有一对具有相互不同的矫顽力的铁磁层，其间夹有绝缘层或非磁性层。 自旋阀元件的平面形状基本上是圆形的，但是在周边部分中设置有多个切口NS，NW，NE，NN。 优选地，至少一个切口的形状与其他切口的形状不同。 此外，提供了采用这种自旋阀元件的存储装置。

    Spin valve element driving method and spin valve element
    6.
    发明授权
    Spin valve element driving method and spin valve element 有权
    自旋阀元件驱动方式和自旋阀元件

    公开(公告)号：US07924609B2

    公开(公告)日：2011-04-12

    申请号：US12809550

    申请日：2008-08-28

    申请人： Haruo Kawakami ,  Yasushi Ogimoto

    发明人： Haruo Kawakami ,  Yasushi Ogimoto

    IPC分类号： G11C11/14

    CPC分类号： H01L43/08 ,  B82Y25/00 ,  H01F10/325 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/329 ,  H03B15/006

    摘要： A spin valve element driving method, and a spin valve element employing such a method, for causing microwave oscillation in a spin valve element. The spin valve element includes an intermediate layer and a pair of ferromagnetic layers including a fixed layer and a free layer sandwiching the intermediate layer, the fixed layer having a higher coercivity than the free layer, and being magnetized in a direction substantially perpendicular to a film plane thereof. The method includes a driving step of passing current from one of the pair of ferromagnetic layers to the other through the intermediate layer.

    摘要翻译： 自旋阀元件驱动方法和采用这种方法的自旋阀元件，用于在自旋阀元件中引起微波振荡。 自旋阀元件包括中间层和一对铁磁层，其包括夹持中间层的固定层和自由层，固定层具有比自由层更高的矫顽力，并且在基本垂直于膜的方向上被磁化 它的平面。 该方法包括将电流从一对铁磁层中的一个通过中间层传递到另一个的驱动步骤。

    Magnetic storage medium and heat assisted recording and reproduction method
    8.
    发明授权
    Magnetic storage medium and heat assisted recording and reproduction method 有权
    磁存储介质和热辅助记录和再现方法

    公开(公告)号：US06603619B1

    公开(公告)日：2003-08-05

    申请号：US09479255

    申请日：2000-01-07

    申请人： Kunio Kojima ,  Yasushi Ogimoto ,  Shinzo Sawamura ,  Hiroyuki Katayama

    发明人： Kunio Kojima ,  Yasushi Ogimoto ,  Shinzo Sawamura ,  Hiroyuki Katayama

    IPC分类号： G11B502

    CPC分类号： G11B5/74 ,  G11B5/64 ,  G11B2005/0016 ,  G11B2005/0018 ,  G11B2005/0021

    摘要： A magnetic storage medium includes a magnetic storage medium that exhibits a magnetic compensation temperature specified higher than room temperature to minimize effects of heat generated by a head using magneto-resistance effect. In a heat assisted recording and reproduction method using such a magnetic storage medium, during reproduction, the S/N ratio in a reproduction signal is enhanced by optimizing the bias current applied to the head using magneto-resistance effect. A magnetic storage medium and a heat assisted recording and reproduction method using such a magnetic storage medium whereby information is magnetically recorded and reproduced by heating a read-out domain are offered that enables signal reproduction with a good S/N ratio despite possible use of a head exhibiting magneto-resistance effect.

    摘要翻译： 磁存储介质包括表现出高于室温的磁补偿温度的磁存储介质，以最小化使用磁阻效应的磁头所产生的热的影响。 在使用这种磁存储介质的热辅助记录和再现方法中，在再现期间，通过使用磁阻效应优化施加到磁头的偏置电流来增强再现信号中的S / N比。 提供使用这样的磁存储介质的磁存储介质和热辅助记录和再现方法，其中信息通过加热读出域磁记录和再现，其使得能够以良好的S / N比进行信号再现，尽管可能使用 头显示磁阻效应。

    Probe, method of its manufacturing, and probe-type memory
    10.
    发明授权
    Probe, method of its manufacturing, and probe-type memory 有权
    探针，其制造方法和探针型记忆

    公开(公告)号：US06208789B1

    公开(公告)日：2001-03-27

    申请号：US09463184

    申请日：2000-01-21

    申请人： Yasushi Ogimoto

    发明人： Yasushi Ogimoto

    IPC分类号： G02B602

    CPC分类号： G01Q60/22 ,  G02B6/241

    摘要： A probe comprising a core (2) having a first end part (2a) on which light from a light source is incident and a second end part (2b) with a diameter smaller than a wavelength of the incident light and a cladding (1) covering the core (2). A thin nitride film (3) made of at least one nitride selected from titanium nitride, zirconium nitride, and hafnium nitride is formed on a surface of the core (2) on the side of the second end part (2b) except the first and second end parts (2a) and (2b). The thin nitride film (3) has a high reflectivity for light with a wavelength of longer than 600 nm and the incident light does not leak out of the probe and reaches the tip of the probe, so that the intensity of the light emitted from the tip of the probe is improved. When the probe is used in a probe-type memory, high density recording with an excellent signal quality (S/N) can be realized.

    摘要翻译： 一种探针，包括具有第一端部（2a）的芯体（2），来自光源的光入射到所述第一端部（2a），以及直径小于入射光的波长的第二端部（2b）和包层（1） 覆盖核心（2）。 在第二端部（2b）的除了第一和第二端部的一侧的芯（2）的表面上形成由氮化钛，氮化锆和氮化铪中的至少一种氮化物制成的薄氮化物膜（3） 第二端部（2a）和（2b）。 薄氮化物膜（3）对于波长超过600nm的光具有高反射率，并且入射光不会从探针中泄漏并到达探针的尖端，使得从 提高探头尖端。 当探针用于探针型存储器时，可以实现具有优异信号质量（S / N）的高密度记录。