公开(公告)号：US09070816B2

公开(公告)日：2015-06-30

申请号：US13878957

申请日：2012-04-06

申请人： Yasushi Ogimoto

发明人： Yasushi Ogimoto

IPC分类号： H01L35/14 ,  H01L35/34 ,  C30B29/32 ,  C30B33/02 ,  H01L35/22 ,  H01L35/26

CPC分类号： H01L35/14 ,  C30B29/32 ,  C30B33/02 ,  H01L35/22 ,  H01L35/26 ,  H01L35/34

摘要： A thermoelectric conversion material in which the electron spatial distribution assumes a wire structure or a quasi-one-dimensional structure is fabricated. A mode of the present invention provides a thermoelectric conversion structure 100 of a single crystal 10 of SrTiO3 having a (210) plane surface or interface, and having, in the surface or interface, a concave-convex structure including terrace portions 12, 14 in (100) planes and step portions 16 extending along the surface in-plane [001] axis.

摘要翻译： 制造电子空间分布呈现线结构或准一维结构的热电转换材料。 本发明的一种模式提供了具有（210）面表面或界面的SrTiO 3的单晶10的热电转换结构100，并且在表面或界面中具有包括露台部分12,14的凹凸结构 （100）平面和台阶部分16沿着平面内[001]轴线的表面延伸。

公开(公告)号：US09041388B2

公开(公告)日：2015-05-26

申请号：US13387318

申请日：2010-04-12

申请人： Yasushi Ogimoto

发明人： Yasushi Ogimoto

IPC分类号： G01R33/02 ,  G01R15/14

CPC分类号： G01R15/205 ,  G01R15/148 ,  G01R33/093 ,  G01R33/098

摘要： A non-contact current censor includes a spin valve structure (2), an electrical unit (4) that applies a varying current to the spin valve structure (2), and a resistance reading unit that electrically reads out a resistance value of the spin valve structure (2). When a current-induced magnetic field is detected, a coercive force of a free layer (14) is configured to be larger than the current-induced magnetic field as a detection target, and the electrical unit (4) allows the magnetization directions of a pinned layer (12) and the free layer (14) to transition between a mutually parallel state and a mutually anti-parallel state by applying the current to the spin valve structure (2). The resistance reading unit (5) detects a threshold value corresponding to the transition.

摘要翻译： 非接触电流检测器包括自旋阀结构（2），向自旋阀结构（2）施加变化电流的电单元（4）;以及电阻读取单元，其电读出旋转电阻值 阀门结构（2）。 当检测到电流感应磁场时，自由层（14）的矫顽力被配置为大于作为检测对象的电流感应磁场，并且电单元（4）允许a的磁化方向 被钉扎层（12）和自由层（14）通过将电流施加到自旋阀结构（2）而在相互平行状态和相互反平行状态之间转变。 电阻读取单元（5）检测与转换对应的阈值。

公开(公告)号：US08995179B2

公开(公告)日：2015-03-31

申请号：US13395437

申请日：2010-08-04

申请人： Michiya Yamada ,  Yasushi Ogimoto

发明人： Michiya Yamada ,  Yasushi Ogimoto

IPC分类号： G11C11/00 ,  G11C5/08 ,  H01L27/22 ,  G11C11/16 ,  H01L43/08

CPC分类号： H01L43/12 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/224 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： A magnetoresistance element is disclosed. The magnetoresistance element includes a magnetic tunnel junction portion configured by sequentially stacking a perpendicularly magnetized first magnetic body, an insulation layer, and a perpendicularly magnetized second magnetic body. The second magnetic body has a configuration wherein a ferromagnetic layer and a rare earth-transition metal alloy layer are stacked sequentially from the insulation layer side interface. A heat assist layer that heats the second magnetic body with a heat generated based on a current flowing through the magnetic tunnel junction portion is further provided.

摘要翻译： 公开了一种磁阻元件。 磁阻元件包括通过顺序堆叠垂直磁化的第一磁体，绝缘层和垂直磁化的第二磁体构成的磁性隧道结部分。 第二磁性体具有从绝缘层侧界面依次层叠铁磁层和稀土类过渡金属合金层的构造。 还提供了一种根据流经磁隧道结部分的电流产生的热量来加热第二磁体的热辅助层。

公开(公告)号：US08929131B2

公开(公告)日：2015-01-06

申请号：US13131103

申请日：2009-08-25

申请人： Yasushi Ogimoto

发明人： Yasushi Ogimoto

IPC分类号： G11C11/00 ,  H01L27/22 ,  H01L43/08 ,  G11C11/16

CPC分类号： H01L27/224 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L43/08

摘要： The present invention provides a magnetic memory element that has a spin valve structure formed using a free layer, a non-magnetic layer, and a pinned layer. The free layer has a three-layer structure having a first magnetic layer, an intermediate layer, and a second magnetic layer arranged in this order viewed from the non-magnetic layer. The first magnetic layer is made of a ferromagnetic material. The intermediate layer is made of a non-magnetic material. The second magnetic layer is made of an N-type ferromagnetic material having a magnetic compensation point in the temperature range where a memory storage operation can be available. The magnetization direction of the first magnetic layer and the magnetization direction of the second magnetic layer are parallel to each other at the temperature lower than the magnetic compensation point Tcomp.

摘要翻译： 本发明提供一种具有使用自由层，非磁性层和钉扎层形成的自旋阀结构的磁存储元件。 自由层具有从非磁性层观察的依次排列的第一磁性层，中间层和第二磁性层的三层结构。 第一磁性层由铁磁材料制成。 中间层由非磁性材料制成。 第二磁性层由在存储器存储操作可用的温度范围内具有磁补偿点的N型铁磁材料制成。 第一磁性层的磁化方向和第二磁性层的磁化方向在低于磁补偿点Tcomp的温度下彼此平行。

公开(公告)号：US08750028B2

公开(公告)日：2014-06-10

申请号：US13148093

申请日：2010-05-14

申请人： Yasushi Ogimoto

发明人： Yasushi Ogimoto

IPC分类号： G11C11/00

CPC分类号： H01L43/08 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3286

摘要： A magnetic memory element and a method of driving such an element are disclosed. The magnetic memory element has a magnetic tunnel junction portion with a spin-valve structure having a perpendicular magnetization free layer formed of a perpendicular magnetization film, a perpendicular magnetization pinned layer formed of a perpendicular magnetization film, and a nonmagnetic layer sandwiched between the perpendicular magnetization free layer and the perpendicular magnetization pinned layer, and records information by application of an electric pulse to the magnetic tunnel junction portion. An in-plane magnetization film, interposed in the path of the electric pulse, is disposed in the magnetic tunnel junction portion. The in-plane magnetization film is configured so as to exhibit antiferromagnetic (low-temperature)-ferromagnetic (high-temperature) phase transitions depending on temperature changes based on application of the electric pulse to the magnetic tunnel junction portion.

摘要翻译： 公开了一种磁存储元件及其驱动方法。 磁存储元件具有磁性隧道结部分，其具有自旋阀结构，其具有由垂直磁化膜形成的垂直磁化自由层，由垂直磁化膜形成的垂直磁化固定层和夹在垂直磁化膜之间的非磁性层 自由层和垂直磁化固定层，并通过施加电脉冲将信息记录到磁性隧道结部分。 介于电脉冲路径中的面内磁化膜设置在磁性隧道结部分中。 面内磁化膜配置为根据基于电磁脉冲施加到磁性隧道结部分的温度变化而呈现反铁磁（低温） - 铁磁（高温）相变。

公开(公告)号：US08709617B2

公开(公告)日：2014-04-29

申请号：US13001343

申请日：2008-09-05

申请人： Yasushi Ogimoto ,  Haruo Kawakami

发明人： Yasushi Ogimoto ,  Haruo Kawakami

IPC分类号： H01F10/08 ,  H01L43/08 ,  H01L43/12

CPC分类号： H01F10/3295 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/5607 ,  H01F10/133 ,  H01F10/3268 ,  H01F10/3286 ,  H01L27/224 ,  H01L43/08 ,  Y10T428/1107 ,  Y10T428/1143

摘要： In accordance with one aspect of the invention, a magnetic memory element records information in a spin valve structure having a free layer, a pinning layer, and a nonmagnetic layer sandwiched therebetween. The magnetic memory element further has, on the free layer, a separate nonmagnetic layer and a magnetic change layer having magnetic characteristics which change according to temperature. Multiple cutouts, including one cutout with a different shape, are provided in a peripheral portion of the spin valve structure. A method of driving the magnetic memory element is characterized in that information is recorded by applying unipolar electric pulses.

摘要翻译： 根据本发明的一个方面，磁存储元件将信息记录在具有自由层，钉扎层和夹在其间的非磁性层的自旋阀结构中。 磁存储元件在自由层上还具有单独的非磁性层和具有根据温度变化的磁特性的磁性变化层。 在自旋阀结构的周边部分设置有多个切口，包括具有不同形状的一个切口。 驱动磁存储元件的方法的特征在于通过施加单极电脉冲来记录信息。

公开(公告)号：US20130230722A1

公开(公告)日：2013-09-05

申请号：US13884917

申请日：2011-11-09

申请人： Takeshi Fujii ,  Yasushi Ogimoto

发明人： Takeshi Fujii ,  Yasushi Ogimoto

IPC分类号： H01B5/00

CPC分类号： H01B5/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/182 ,  H01L23/53276 ,  H01L2924/0002 ,  Y10T428/30 ,  H01L2924/00

摘要： A conductive thin film including graphene and having improved conductivity is disclosed. The conductive thin film is composed of a superlattice structure that includes a first and second graphene films formed of respective sheets of carbon atoms that each have at least one atomic layer; and an intercalation film sandwiched between the first and second graphene films. The superlattice structure may have a plurality of stacking units that are stacked and that are each formed of one graphene film and one intercalation film; and the first and second graphene films may have graphene films belonging to two mutually adjacent stacking units from among the plurality of stacking units. The conductive thin film may be transparent and, when the superlattice structure has a plurality of stacking units, a sum total of atomic layers of the sheets of carbon atoms for all the stacking units is ten or fewer.

摘要翻译： 公开了一种包括石墨烯并具有改善的导电性的导电薄膜。 导电薄膜由超晶格结构组成，其包括由各自具有至少一个原子层的各个碳原子形成的第一和第二石墨烯膜; 以及夹在第一和第二石墨烯膜之间的插层膜。 超晶格结构可以具有堆叠的多个堆叠单元，每个堆叠单元由一个石墨烯膜和一个插层膜形成; 并且第一和第二石墨烯膜可以具有属于多个堆叠单元中的两个相互相邻的堆叠单元的石墨烯膜。 导电薄膜可以是透明的，并且当超晶格结构具有多个堆叠单元时，所有堆叠单元的碳原子片的原子层的总和为十个或更少。

公开(公告)号：US08279661B2

公开(公告)日：2012-10-02

申请号：US12734292

申请日：2008-08-28

申请人： Yasushi Ogimoto ,  Haruo Kawakami

发明人： Yasushi Ogimoto ,  Haruo Kawakami

IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C11/15

CPC分类号： H01L43/08 ,  G11C7/04 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/224

摘要： A magnetic memory element (10) for use in a cross-point type memory is provided with a spin valve structure having a free layer (5), a nonmagnetic layer (4), and a pinned layer (3). The magnetic memory element is also provided with another nonmagnetic layer (6) on one surface of the free layer (5), and furthermore, a magnetic change layer (7) whose magnetic characteristics change depending on temperature so as to sandwich the nonmagnetic layer (6) with the free layer (5). In the magnetic change layer (7), the magnetization intensity increases depending on temperature.

摘要翻译： 在交叉点型存储器中使用的磁存储元件（10）设置有具有自由层（5），非磁性层（4）和钉扎层（3）的自旋阀结构。 磁存储元件还在自由层（5）的一个表面上设置有另一非磁性层（6），此外，磁性层（7）的磁特性根据温度而变化以夹住非磁性层（ 6）与自由层（5）。 在磁性变化层（7）中，磁化强度随温度而增加。

公开(公告)号：US20120187945A1

公开(公告)日：2012-07-26

申请号：US13387318

申请日：2010-04-12

申请人： Yasushi Ogimoto

发明人： Yasushi Ogimoto

IPC分类号： G01R33/02

CPC分类号： G01R15/205 ,  G01R15/148 ,  G01R33/093 ,  G01R33/098

摘要： A non-contact current censor includes a spin valve structure (2), an electrical unit (4) that applies a varying current to the spin valve structure (2), and a resistance reading unit that electrically reads out a resistance value of the spin valve structure (2). When a current-induced magnetic field is detected, a coercive force of a free layer (14) is configured to be larger than the current-induced magnetic field as a detection target, and the electrical unit (4) allows the magnetization directions of a pinned layer (12) and the free layer (14) to transition between a mutually parallel state and a mutually anti-parallel state by applying the current to the spin valve structure (2). The resistance reading unit (5) detects a threshold value corresponding to the transition.

摘要翻译： 非接触电流检测器包括自旋阀结构（2），向自旋阀结构（2）施加变化电流的电单元（4）;以及电阻读取单元，其电读出旋转电阻值 阀门结构（2）。 当检测到电流感应磁场时，自由层（14）的矫顽力被配置为大于作为检测对象的电流感应磁场，并且电单元（4）允许a的磁化方向 被钉扎层（12）和自由层（14）通过将电流施加到自旋阀结构（2）而在相互平行状态和相互反平行状态之间转变。 电阻读取单元（5）检测与转换对应的阈值。

公开(公告)号：US20120075922A1

公开(公告)日：2012-03-29

申请号：US13263734

申请日：2010-03-17

申请人： Michiya Yamada ,  Yasushi Ogimoto

发明人： Michiya Yamada ,  Yasushi Ogimoto

IPC分类号： G11C11/16 ,  H01L29/82

CPC分类号： H01L27/228 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/303 ,  H01L43/08

摘要： A magnetic memory element capable of maintaining high thermal stability (retention characteristics) while reducing a writing current. The magnetic memory element includes a magnetic tunnel junction having a first magnetic body including a perpendicular magnetization film, an insulating layer, and a second magnetic body serving as a storage layer including a perpendicular magnetization film, which are sequentially stacked. A thermal expansion layer is disposed in contact with the magnetic tunnel junction portion. The second magnetic body is deformed in a direction in which the cross section thereof increases or decreases by the thermal expansion or contraction of the thermal expansion layer due to the flow of a current, thereby reducing a switching current threshold value required to change the magnetization direction.

摘要翻译： 一种能够在降低写入电流的同时保持高热稳定性（保持特性）的磁记忆元件。 磁存储元件包括磁性隧道结，该磁性隧道结具有包括垂直磁化膜的第一磁体，绝缘层和用作包括垂直磁化膜的存储层的第二磁性体，它们依次堆叠。 热膨胀层设置成与磁性隧道结部分接触。 由于电流的流动，第二磁性体由于热膨胀层的热膨胀或收缩使其横截面增大或减小的方向变形，从而降低了改变磁化方向所需的开关电流阈值 。