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US08884418B2 Semiconductor device and method of forming PIP with inner known good die interconnected with conductive bumps 有权
半导体器件和用导电凸块互连的具有内部已知的良好管芯的PIP形成方法

Semiconductor device and method of forming PIP with inner known good die interconnected with conductive bumps
摘要：
A PiP semiconductor device has an inner known good semiconductor package. In the semiconductor package, a first via is formed in a temporary carrier. A first conductive layer is formed over the carrier and into the first via. The first conductive layer in the first via forms a conductive bump. A first semiconductor die is mounted to the first conductive layer. A first encapsulant is deposited over the first die and carrier. The semiconductor package is mounted to a substrate. A second semiconductor die is mounted to the first conductive layer opposite the first die. A second encapsulant is deposited over the second die and semiconductor package. A second via is formed in the second encapsulant to expose the conductive bump. A second conductive layer is formed over the second encapsulant and into the second via. The second conductive layer is electrically connected to the second die.
摘要（中）：

PiP半导体器件具有内部已知的良好半导体封装。 在半导体封装中，在临时载体中形成第一通孔。 第一导电层形成在载体上并进入第一通孔中。 第一通孔中的第一导电层形成导电凸块。 第一半导体管芯安装到第一导电层。 第一密封剂沉积在第一模具和载体上。 半导体封装被安装到基板上。 第二半导体管芯安装到与第一管芯相对的第一导电层。 第二密封剂沉积在第二管芯和半导体封装上。 在第二密封剂中形成第二通孔以暴露导电凸块。 第二导电层形成在第二密封剂上并进入第二通孔中。 第二导电层电连接到第二管芯。

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