- 专利标题: Polishing agent for copper polishing and polishing method using same
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申请号: US13201529申请日: 2010-02-12
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公开(公告)号: US08889555B2公开(公告)日: 2014-11-18
- 发明人: Hiroshi Ono , Takashi Shinoda , Yuuhei Okada
- 申请人: Hiroshi Ono , Takashi Shinoda , Yuuhei Okada
- 申请人地址: JP Tokyo
- 专利权人: Hitachi Chemical Co., Ltd.
- 当前专利权人: Hitachi Chemical Co., Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Westerman, Hattori, Daniels & Adrian, LLP
- 优先权: JP2009-032635 20090216; JP2009-121144 20090519; JP2009-290563 20091222; WOPCT/JP2010/050806 20100122
- 国际申请: PCT/JP2010/052069 WO 20100212
- 国际公布: WO2010/093011 WO 20100819
- 主分类号: H01L21/302
- IPC分类号: H01L21/302 ; C09G1/02 ; C09K13/06 ; H01L21/768 ; H01L21/321 ; C09K3/14 ; B24B37/04
摘要:
A polishing agent for copper polishing, comprising (A) an inorganic acid with divalent or greater valence, (B) an amino acid, (C) a protective film-forming agent, (D) an abrasive, (E) an oxidizing agent and (F) water, wherein the content of the component (A) is at least 0.08 mol/kg, the content of the component (B) is at least 0.20 mol/kg, the content of the component (C) is at least 0.02 mol/kg, and either or both of the following conditions (i) and (ii) are satisfied. (i): The proportion of the content of the component (A) with respect to the content of the component (C) is 2.00 or greater. (ii): It further comprises (G) at least one kind selected from among organic acids and their acid anhydrides.