Invention Grant
US08907445B2 Substrate to which film is formed, organic EL display device, and vapor deposition method
有权
形成有膜的基板,有机EL显示装置和气相沉积法
- Patent Title: Substrate to which film is formed, organic EL display device, and vapor deposition method
- Patent Title (中): 形成有膜的基板,有机EL显示装置和气相沉积法
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Application No.: US13980563Application Date: 2012-01-13
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Publication No.: US08907445B2Publication Date: 2014-12-09
- Inventor: Tohru Sonoda , Shinichi Kawato , Satoshi Inoue , Satoshi Hashimoto
- Applicant: Tohru Sonoda , Shinichi Kawato , Satoshi Inoue , Satoshi Hashimoto
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Morrison & Foerster LLP
- Priority: JP2011-009182 20110119
- International Application: PCT/JP2012/050616 WO 20120113
- International Announcement: WO2012/099019 WO 20120726
- Main IPC: H01L27/32
- IPC: H01L27/32 ; C23C14/12 ; H05B33/10 ; H01L51/00 ; C23C14/04 ; H01L51/56

Abstract:
A film formation substrate (200) is a film formation substrate having a plurality of vapor deposition regions (24R and 24G) (i) which are arranged along a predetermined direction and (ii) in which respective vapor-deposited films (23R and 23G) are provided. The vapor-deposited film (24R) has inclined side surfaces 23s which are inclined with respect to a direction normal to the film formation substrate (200). A width, in the predetermined direction, of the vapor-deposited film (23R) is larger than the sum of (i) a width, in the predetermined direction, of the vapor deposition region (24R) and (ii) a width, in the predetermined direction, of a region (29) between the vapor deposition region (24R) and the vapor deposition region (24G).
Public/Granted literature
- US20130299810A1 SUBSTRATE TO WHICH FILM IS FORMED, ORGANIC EL DISPLAY DEVICE, AND VAPOR DEPOSITION METHOD Public/Granted day:2013-11-14
Information query
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