发明授权
- 专利标题： Method of making a lithography mask
- 专利标题（中）： 制作光刻掩模的方法
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申请号： US13437075申请日： 2012-04-02
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公开(公告)号： US08916482B2公开(公告)日： 2014-12-23
- 发明人: Hsin-Chang Lee , Yun-Yue Lin , Hung-Chang Hsieh , Chia-Jen Chen , Yih-Chen Su , Ta-Cheng Lien , Anthony Yen
- 申请人： Hsin-Chang Lee , Yun-Yue Lin , Hung-Chang Hsieh , Chia-Jen Chen , Yih-Chen Su , Ta-Cheng Lien , Anthony Yen
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
A method of making a lithography mask with a stress-relief treatment is disclosed. The method includes providing a substrate and depositing an opaque layer on the substrate. The opaque layer is patterned to form a patterned mask. A stress-relief treatment is applied to the patterned mask by using an radiation exposure.
公开/授权文献
- US20130260573A1 METHOD OF MAKING A LITHOGRAPHY MASK 公开/授权日：2013-10-03
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