Invention Grant
- Patent Title: Method of making a lithography mask
- Patent Title (中): 制作光刻掩模的方法
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Application No.: US13437075Application Date: 2012-04-02
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Publication No.: US08916482B2Publication Date: 2014-12-23
- Inventor: Hsin-Chang Lee , Yun-Yue Lin , Hung-Chang Hsieh , Chia-Jen Chen , Yih-Chen Su , Ta-Cheng Lien , Anthony Yen
- Applicant: Hsin-Chang Lee , Yun-Yue Lin , Hung-Chang Hsieh , Chia-Jen Chen , Yih-Chen Su , Ta-Cheng Lien , Anthony Yen
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
A method of making a lithography mask with a stress-relief treatment is disclosed. The method includes providing a substrate and depositing an opaque layer on the substrate. The opaque layer is patterned to form a patterned mask. A stress-relief treatment is applied to the patterned mask by using an radiation exposure.
Public/Granted literature
- US20130260573A1 METHOD OF MAKING A LITHOGRAPHY MASK Public/Granted day:2013-10-03
Information query
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