Invention Grant
- Patent Title: Solid-state imaging element, method of manufacturing the same, solid-state imaging apparatus, and imaging apparatus
- Patent Title (中): 固体摄像元件及其制造方法，固体摄像装置及摄像装置
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Application No.: US13888926Application Date: 2013-05-07
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Publication No.: US08928103B2Publication Date: 2015-01-06
- Inventor: Yoshiyuki Ohba , Susumu Hiyama , Itaru Oshiyama
- Applicant: Sony Corporation
- Applicant Address: JP
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP
- Agency: Sheridan Ross P.C.
- Priority: JP2010-194181 20100831
- Main IPC: H01L31/0232
- IPC: H01L31/0232 ; H01L21/00 ; H01L27/146 ; H01L31/0216 ; H01L31/02
Abstract:
A solid-state imaging element including a semiconductor substrate that has a light reception portion performing a photoelectric conversion of an incident light; an oxide layer that is formed on a surface of the semiconductor substrate; a light shielding layer that is formed on an upper layer further than the oxide layer via an adhesion layer; and an oxygen supply layer that is disposed between the oxide layer and the adhesion layer and is formed of a material which shows an oxidation enthalpy smaller than that of a material forming the oxide layer.
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