发明授权
- 专利标题: Focused ion beam low kV enhancement
- 专利标题(中): 聚焦离子束低kV增强
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申请号: US13779142申请日: 2013-02-27
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公开(公告)号: US08933414B2公开(公告)日: 2015-01-13
- 发明人: Mostafa Maazouz
- 申请人: FEI Company
- 申请人地址: US OR Hillsboro
- 专利权人: FEI Company
- 当前专利权人: FEI Company
- 当前专利权人地址: US OR Hillsboro
- 代理机构: Scheinberg & Associates, PC
- 代理商 Ki O; John E. Hillert
- 主分类号: H01J37/05
- IPC分类号: H01J37/05 ; H01J49/10 ; H01J49/26 ; G01R31/305 ; H01J37/04 ; H01J3/02
摘要:
The invention provides a charged particle beam system wherein the middle section of the focused ion beam column is biased to a high negative voltage allowing the beam to move at higher potential than the final beam energy inside that section of the column. At low kV potential, the aberrations and coulomb interactions are reduced, which results in significant improvements in spot size.
公开/授权文献
- US20140239175A1 Focused Ion Beam Low kV Enhancement 公开/授权日:2014-08-28
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