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发明授权
US08946772B2 Substrate for epitaxial growth, process for manufacturing GaN-based semiconductor film, GaN-based semiconductor film, process for manufacturing GaN-based semiconductor light emitting element and GaN-based semiconductor light emitting element 有权
用于外延生长的衬底，用于制造GaN基半导体膜的工艺，GaN基半导体膜，用于制造GaN基半导体发光元件的工艺和GaN基半导体发光元件

Substrate for epitaxial growth, process for manufacturing GaN-based semiconductor film, GaN-based semiconductor film, process for manufacturing GaN-based semiconductor light emitting element and GaN-based semiconductor light emitting element
摘要：
A substrate for epitaxial growth of the present invention comprises: a single crystal part comprising a material different from a GaN-based semiconductor at least in a surface layer part; and an uneven surface, as a surface for epitaxial growth, comprising a plurality of convex portions arranged so that each of the convex portions has three other closest convex portions in directions different from each other by 120 degrees and a plurality of growth spaces, each of which is surrounded by six of the convex portions, wherein the single crystal part is exposed at least on the growth space, which enables a c-axis-oriented GaN-based semiconductor crystal to grow from the growth space.
摘要（中）：

本发明的用于外延生长的衬底包括：至少在表层部分包括不同于GaN基半导体的材料的单晶部分; 以及作为外延生长用表面的不平坦表面，包括多个凸部，其布置成使得每个凸部在彼此相差120度的方向上具有三个其他最接近的凸部，以及多个生长空间， 其由六个凸部包围，其中至少在生长空间上露出单晶部分，这使得c轴取向的GaN基半导体晶体能够从生长空间生长。

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