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1.发明申请SUBSTRATE FOR EPITAXIAL GROWTH, PROCESS FOR MANUFACTURING GaN-BASED SEMICONDUCTOR FILM, GaN-BASED SEMICONDUCTOR FILM, PROCESS FOR MANUFACTURING GaN-BASED SEMICONDUCTOR LIGHT EMITTING ELEMENT AND GaN-BASED SEMICONDUCTOR LIGHT EMITTING ELEMENT 有权用于外延生长的衬底，用于制造GaN基半导体膜的工艺，基于GaN的半导体膜，用于制造GaN基半导体发光元件和基于GaN的半导体发光元件的工艺公开(公告)号：US20110198560A1
公开(公告)日：2011-08-18
申请号：US12867787
申请日：2009-02-13
申请人： Hiroaki Okagawa , Hiromitsu Kudo , Teruhisa Nakai , Seong-Jin Kim
发明人： Hiroaki Okagawa , Hiromitsu Kudo , Teruhisa Nakai , Seong-Jin Kim
CPC分类号： C23C16/303 , C23C16/0236 , C30B25/18 , C30B29/403 , H01L21/02378 , H01L21/02381 , H01L21/02403 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/0254 , H01L21/02658 , H01L21/02661 , H01L33/007 , H01L33/18 , H01L33/32
摘要： A substrate for epitaxial growth of the present invention comprises: a single crystal part comprising a material different from a GaN-based semiconductor at least in a surface layer part; and an uneven surface, as a surface for epitaxial growth, comprising a plurality of convex portions arranged so that each of the convex portions has three other closest convex portions in directions different from each other by 120 degrees and a plurality of growth spaces, each of which is surrounded by six of the convex portions, wherein the single crystal part is exposed at least on the growth space, which enables a c-axis-oriented GaN-based semiconductor crystal to grow from the growth space.
摘要翻译： 本发明的用于外延生长的衬底包括：至少在表层部分包括不同于GaN基半导体的材料的单晶部分; 以及作为外延生长用表面的不平坦表面，包括多个凸部，其布置成使得每个凸部在彼此相差120度的方向上具有三个其他最接近的凸部，以及多个生长空间， 其由六个凸部包围，其中至少在生长空间上露出单晶部分，这使得c轴取向的GaN基半导体晶体能够从生长空间生长。
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2.发明授权Substrate for epitaxial growth, process for manufacturing GaN-based semiconductor film, GaN-based semiconductor film, process for manufacturing GaN-based semiconductor light emitting element and GaN-based semiconductor light emitting element 有权用于外延生长的衬底，用于制造GaN基半导体膜的工艺，GaN基半导体膜，用于制造GaN基半导体发光元件的工艺和GaN基半导体发光元件公开(公告)号：US08946772B2
公开(公告)日：2015-02-03
申请号：US12867787
申请日：2009-02-13
申请人： Hiroaki Okagawa , Hiromitsu Kudo , Teruhisa Nakai , Seong-Jin Kim
发明人： Hiroaki Okagawa , Hiromitsu Kudo , Teruhisa Nakai , Seong-Jin Kim
IPC分类号： H01L21/02 , C23C16/30 , C23C16/02 , C30B25/18 , C30B29/40 , H01L33/00 , H01L33/18 , H01L33/32
CPC分类号： C23C16/303 , C23C16/0236 , C30B25/18 , C30B29/403 , H01L21/02378 , H01L21/02381 , H01L21/02403 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/0254 , H01L21/02658 , H01L21/02661 , H01L33/007 , H01L33/18 , H01L33/32
摘要： A substrate for epitaxial growth of the present invention comprises: a single crystal part comprising a material different from a GaN-based semiconductor at least in a surface layer part; and an uneven surface, as a surface for epitaxial growth, comprising a plurality of convex portions arranged so that each of the convex portions has three other closest convex portions in directions different from each other by 120 degrees and a plurality of growth spaces, each of which is surrounded by six of the convex portions, wherein the single crystal part is exposed at least on the growth space, which enables a c-axis-oriented GaN-based semiconductor crystal to grow from the growth space.
摘要翻译： 本发明的用于外延生长的衬底包括：至少在表层部分包括不同于GaN基半导体的材料的单晶部分; 以及作为外延生长用表面的不平坦表面，包括多个凸部，其布置成使得每个凸部在彼此相差120度的方向上具有三个其他最接近的凸部，以及多个生长空间， 其由六个凸部包围，其中至少在生长空间上露出单晶部分，这使得c轴取向的GaN基半导体晶体能够从生长空间生长。
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公开(公告)号：US20100314642A1
公开(公告)日：2010-12-16
申请号：US12446385
申请日：2007-10-19
申请人： Hiromitsu Kudo , Hirokazu Taniguchi , Hiroaki Okagawa , Shin Hiraoka , Takahide Joichi , Toshihiko Shima
发明人： Hiromitsu Kudo , Hirokazu Taniguchi , Hiroaki Okagawa , Shin Hiraoka , Takahide Joichi , Toshihiko Shima
IPC分类号： H01L33/46
摘要： A nitride semiconductor light-emitting diode element 1 includes a nitride semiconductor layer 12 having a bottom surface and an upper surface and containing a light emitting layer 12b inside, and a supporting substrate 11 made from a metal is bonded to the bottom surface of the nitride semiconductor layer 12. A light reflecting depression A1 to reflect light generated in the light emitting layer 12b is formed in the bottom surface of the nitride semiconductor layer 12. According to the nitride semiconductor light-emitting diode element 1, since the light generated from the light emitting layer 12b and propagated in the nitride semiconductor layer 12 in a layer direction is reflected by the light reflecting depression A1 and its travel direction is changed, the ratio of the light incident upon the upper surface of the nitride semiconductor layer 12 within a critical angle is increased. Thus, light extraction efficiency is improved as compared with a conventional nitride semiconductor light-emitting diode element.
摘要翻译： 氮化物半导体发光二极管元件1包括具有底表面和上表面并且在其内部包含发光层12b的氮化物半导体层12，并且由金属制成的支撑衬底11接合到氮化物的底表面 半导体层12.在氮化物半导体层12的底面形成用于反射在发光层12b中产生的光的光反射凹部A1。根据氮化物半导体发光二极管元件1，由于从 发光层12b在层状方向上在氮化物半导体层12中传播，被光反射凹部A1反射，其行进方向变化，入射到氮化物半导体层12的上表面的光的比例在关键 角度增加。 因此，与传统的氮化物半导体发光二极管元件相比，光提取效率提高。
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公开(公告)号：US20080048194A1
公开(公告)日：2008-02-28
申请号：US11629532
申请日：2005-06-13
IPC分类号： H01L29/22
摘要： A nitride semiconductor light emitting element having a laminate S made of a semiconductor crystal layer, wherein the laminate S includes an n-type layer 2, a light emitting layer 3 and a p-type layer 4. The p-type layer 4 has a p-type contact layer 42 to be in contact with the p-side electrode P2. The p-type contact layer 42 comprises a first contact layer 42a and a second contact layer 42b. The first contact layer 42a is in contact with the p-side electrode P2 on one surface and in contact with the second contact layer 42b on the other surface. The first contact layer 42a is made of Alx1Iny1Gaz1N (0
摘要翻译： 具有由半导体晶体层构成的层叠体S的氮化物半导体发光元件，其中层叠体S包括n型层2，发光层3和p型层4. p型层4具有 p型接触层42与p侧电极P 2接触.p型接触层42包括第一接触层42a和第二接触层42b。 第一接触层42a在一个表面上与p侧电极P 2接触并且在另一个表面上与第二接触层42b接触。 第一接触层42a由Al x 1 N 1（0
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公开(公告)号：US08716728B2
公开(公告)日：2014-05-06
申请号：US12446385
申请日：2007-10-19
申请人： Hiromitsu Kudo , Hirokazu Taniguchi , Hiroaki Okagawa , Shin Hiraoka , Takahide Joichi , Toshihiko Shima
发明人： Hiromitsu Kudo , Hirokazu Taniguchi , Hiroaki Okagawa , Shin Hiraoka , Takahide Joichi , Toshihiko Shima
IPC分类号： H01L33/22
摘要： A nitride semiconductor light-emitting diode element 1 includes a nitride semiconductor layer 12 having a bottom surface and an upper surface and containing a light emitting layer 12b inside, and a supporting substrate 11 made from a metal is bonded to the bottom surface of the nitride semiconductor layer 12. A light reflecting depression A1 to reflect light generated in the light emitting layer 12b is formed in the bottom surface of the nitride semiconductor layer 12. According to the nitride semiconductor light-emitting diode element 1, since the light generated from the light emitting layer 12b and propagated in the nitride semiconductor layer 12 in a layer direction is reflected by the light reflecting depression A1 and its travel direction is changed, the ratio of the light incident upon the upper surface of the nitride semiconductor layer 12 within a critical angle is increased. Thus, light extraction efficiency is improved as compared with a conventional nitride semiconductor light-emitting diode element.
摘要翻译： 氮化物半导体发光二极管元件1包括具有底表面和上表面并且在其内部包含发光层12b的氮化物半导体层12，并且由金属制成的支撑衬底11接合到氮化物的底表面 半导体层12.在氮化物半导体层12的底面形成用于反射在发光层12b中产生的光的光反射凹部A1。根据氮化物半导体发光二极管元件1，由于从 发光层12b在层状方向上在氮化物半导体层12中传播，被光反射凹部A1反射，其行进方向变化，入射到氮化物半导体层12的上表面的光的比例在关键 角度增加。 因此，与传统的氮化物半导体发光二极管元件相比，光提取效率提高。
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公开(公告)号：US06794210B2
公开(公告)日：2004-09-21
申请号：US10703330
申请日：2003-11-07
IPC分类号： H01L2100
CPC分类号： C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02642 , H01L21/02658 , H01L33/007 , H01L33/0075
摘要： The state of a surface of a substrate 11 or a GaN group compound semiconductor film 12 formed on the substrate 11 is modified with an anti-surfactant material and a GaN group compound semiconductor material is supplied by a vapor phase growth method to form dot structures made of the GaN group compound semiconductor on the surface of the semiconductor film 12, and the growth is continued until the dot structures join and the surface becomes flat. In this case, the dot structures join while forming a cavity 21 on an anti-surfactant region. A dislocation line 22 extending from the underlayer is blocked by the cavity 21, and therefore, the dislocation density of an epitaxial film surface can be reduced. As a result, the dislocation density of the GaN group compound semiconductor crystal can be reduced without using a masking material in the epitaxial growth, whereby a high quality epitaxial film can be obtained.
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7.发明授权Method for growing GaN compound semiconductor crystal and semiconductor substrate 失效生长GaN化合物半导体晶体和半导体衬底的方法公开(公告)号：US06700179B1
公开(公告)日：2004-03-02
申请号：US09937337
申请日：2001-12-18
IPC分类号： H01L2922
CPC分类号： C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02642 , H01L21/02658 , H01L33/007 , H01L33/0075
摘要： The state of a surface of a substrate 11 or a GaN group compound semiconductor film 12 formed on the substrate 11 is modified with an anti-surfactant material and a GaN group compound semiconductor material is supplied by a vapor phase growth method to form dot structures made of the GaN group compound semiconductor on the surface of the semiconductor film 12, and the growth is continued until the dot structures join and the surface becomes flat. In this case, the dot structures join while forming a cavity 21 on an anti-surfactant region. A dislocation line 22 extending from the underlayer is blocked by the cavity 21, and therefore, the dislocation density of an epitaxial film surface can be reduced. As a result, the dislocation density of the GaN group compound semiconductor crystal can be reduced without using a masking material in the epitaxial growth, whereby a high quality epitaxial film can be obtained.
摘要翻译： 用抗表面活性剂材料改变形成在基板11上的基板11或GaN基化合物半导体膜12的表面的状态，并通过气相生长法提供GaN族化合物半导体材料，以形成点状结构 的半导体膜12的表面上的GaN族化合物半导体，并且继续生长直到点结构接合并且表面变平坦。 在这种情况下，点状结构在抗表面活性剂区域上形成空腔21时连接。 从底层延伸的位错线22被空腔21阻挡，因此可以减小外延膜表面的位错密度。 结果，可以在外延生长中不使用掩模材料来降低GaN族化合物半导体晶体的位错密度，由此可以获得高质量的外延膜。
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公开(公告)号：US5793061A
公开(公告)日：1998-08-11
申请号：US703482
申请日：1996-08-28
CPC分类号： H01L33/32
摘要： A group-III nitride based light emitter such as LED and LD, which has a double heterostructure and which comprises a diffusion suppressive layer between a p-type cladding layer and an active layer. The diode having a diffusion suppressive layer of the present invention has higher luminous intensity, greater forward voltage, and longer lifetime than the conventional diodes.
摘要翻译： 一种III族氮化物基发光体，例如LED和LD，其具有双异质结构，并且在p型包覆层和有源层之间包括扩散抑制层。 具有本发明的扩散抑制层的二极管具有比常规二极管更高的发光强度，更大的正向电压和更长的寿命。
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公开(公告)号：US20120112626A1
公开(公告)日：2012-05-10
申请号：US13292507
申请日：2011-11-09
IPC分类号： H01L33/08
CPC分类号： H01L33/08 , C09K11/0883 , C09K11/7718 , C09K11/7721 , C09K11/7734 , C09K11/7738 , C09K11/7774 , H01L33/504 , Y02B20/181
摘要： A white light-emitting semiconductor device having improved reproducibility of bright red. The device outputs light having a blue component, a green component, and a red component. Each of the light components (blue, green, and red) consists of a light-emitting semiconductor element and/or a phosphor that absorbs light emitted by a light-emitting semiconductor element and emits light through wavelength conversion. The outputted light has a spectrum which has a maximum wavelength in the range of 615-645 nm, and the intensity at a wavelength of 580 nm of the outputted light, which has been normalized with respect to luminous flux, is 80-100% of the intensity at a wavelength of 580 nm of standard light for color rendering evaluation, which has been normalized with respect to luminous flux.
摘要翻译： 一种具有亮红色再现性的白色发光半导体器件。 该装置输出具有蓝色分量，绿色分量和红色分量的光。 每个光分量（蓝，绿，红）由发光半导体元件和/或荧光体组成，该发光半导体元件和/或荧光体吸收由发光半导体元件发出的光并通过波长转换发光。 输出的光具有在615-645nm的范围内具有最大波长的光谱，并且已经相对于光通量归一化的输出光的波长580nm处的强度为80-100％ 用于显色评估的标准光的波长580nm处的强度已经相对于光通量被归一化。
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公开(公告)号：US20110012154A1
公开(公告)日：2011-01-20
申请号：US12810980
申请日：2008-11-07
摘要： Provided is a GaN-based LED element having a novel structure for improving output by increasing light extraction efficiency. A GaN-based LED element comprising: a semiconductor laminated structure in which an n-type GaN-based semiconductor layer is arranged on the side of a lower surface of a p-type GaN-based semiconductor layer having an upper surface and the lower surface, and a light emitting part comprising a GaN-based semiconductor is interposed between the layers; a p-side electrode formed on the upper surface of the p-type GaN-based semiconductor layer; and an n-side electrode electrically connected to the n-type GaN-based semiconductor layer, wherein the p-side electrode comprises a transparent conductive film comprising a window region serving as a window for extracting light generated in the light emitting part, and a flat section and a rough surface section formed by a roughening treatment are arranged to form a predetermined mixed pattern on the upper surface of the p-type GaN-based semiconductor layer covered with the window region of the transparent conductive film.
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