Invention Grant
- Patent Title: GaN HEMTs and GaN diodes
- Patent Title (中): GaN HEMT和GaN二极管
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Application No.: US14108042Application Date: 2013-12-16
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Publication No.: US08962461B2Publication Date: 2015-02-24
- Inventor: Godefridus Adrianus Maria Hurkx , Jeroen Antoon Croon , Johannes Josephus Theodorus Marinus Donkers , Stephan Heil , Jan Sonsky
- Applicant: NXP B.V.
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Priority: EP12198130 20121219
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L21/44 ; H01L29/47 ; H01L29/40 ; H01L29/778 ; H01L29/872 ; H01L23/31 ; H01L29/423 ; H01L29/20

Abstract:
Consistent with an example embodiment, a GaN heterojunction structure has a three-layer dielectric structure. The lowermost and middle portions of the gate electrode together define the gate foot, and this is associated with two dielectric layers. A thinner first dielectric layer is adjacent the gate edge at the bottom of the gate electrode. The second dielectriclayer corresponds to the layer in the conventional structure, and it is level with the main portion of the gate foot.
Public/Granted literature
- US20140167064A1 GaN HEMTs AND GaN DIODES Public/Granted day:2014-06-19
Information query
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