Invention Grant
- Patent Title: Sputtering device and sputtering method
- Patent Title (中): 溅射装置和溅射法
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Application No.: US13121338Application Date: 2009-09-29
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Publication No.: US08968538B2Publication Date: 2015-03-03
- Inventor: Toru Kitada , Naoki Watanabe , Motonobu Nagai , Masahiro Suenaga , Takeo Konno
- Applicant: Toru Kitada , Naoki Watanabe , Motonobu Nagai , Masahiro Suenaga , Takeo Konno
- Applicant Address: JP Kawasaki-shi
- Assignee: Canon Anelva Corporation
- Current Assignee: Canon Anelva Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2008-252858 20080930
- International Application: PCT/JP2009/004973 WO 20090929
- International Announcement: WO2010/038421 WO 20100408
- Main IPC: C23C14/00
- IPC: C23C14/00 ; C25B9/00 ; C25B11/00 ; C25B13/00 ; C23C14/54 ; C23C14/34 ; H01J37/32 ; H01J37/34 ; H01F41/18

Abstract:
A magnetic film having excellent uniformity in in-plane distribution of film thickness or sheet resistance is formed when the film is formed by forming a magnetic field on a processing surface of a substrate (21) and performing oblique incidence sputtering by using high discharge power.A sputtering apparatus (1) is provided with a substrate holder (22) for holding rotatably the substrate (21) in the surface direction of the processing surface of the substrate; a substrate magnetic field forming device (30) which is disposed to surround the substrate (21) and forms a magnetic field on the processing surface of the substrate (21); cathodes (41) which are arranged diagonally above the substrate (21) and are supplied with electric discharge power; a position detecting device (23) for detecting a rotation position of the substrate (21); and a control device (50) which adjusts the rotation speed of the substrate (21) in accordance with the rotation position detected by the position detecting device (23).
Public/Granted literature
- US20110223346A1 SPUTTERING DEVICE AND SPUTTERING METHOD Public/Granted day:2011-09-15
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