发明授权
- 专利标题: Integrated passives and power amplifier
- 专利标题(中): 集成无源和功率放大器
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申请号: US13235158申请日: 2011-09-16
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公开(公告)号: US08970516B2公开(公告)日: 2015-03-03
- 发明人: Justin Phelps Black , Ravindra V. Shenoy , Evgeni Petrovich Gousev , Aristotele Hadjichristos , Thomas Andrew Myers , Jonghae Kim , Mario Francisco Velez , Je-Hsiung Jeffrey Lan , Chi Shun Lo
- 申请人: Justin Phelps Black , Ravindra V. Shenoy , Evgeni Petrovich Gousev , Aristotele Hadjichristos , Thomas Andrew Myers , Jonghae Kim , Mario Francisco Velez , Je-Hsiung Jeffrey Lan , Chi Shun Lo
- 申请人地址: US CA San Diego
- 专利权人: QUALCOMM MEMS Technologies, Inc.
- 当前专利权人: QUALCOMM MEMS Technologies, Inc.
- 当前专利权人地址: US CA San Diego
- 代理机构: Weaver Austin Villeneuve & Sampson
- 主分类号: G06F3/041
- IPC分类号: G06F3/041 ; G02B26/00 ; H01L21/56 ; H01L23/31
摘要:
This disclosure provides systems, methods and apparatus for combining devices deposited on a first substrate, with integrated circuits formed on a second substrate such as a semiconducting substrate or a glass substrate. The first substrate may be a glass substrate. The first substrate may include conductive vias. A power combiner circuit may be deposited on a first side of the first substrate. The power combiner circuit may include passive devices deposited on at least the first side of the first substrate. The integrated circuit may include a power amplifier circuit disposed on and configured for electrical connection with the power combiner circuit, to form a power amplification system. The conductive vias may include thermal vias configured for conducting heat from the power amplification system and/or interconnect vias configured for electrical connection between the power amplification system and a conductor on a second side of the first substrate.
公开/授权文献
- US20120075216A1 INTEGRATED PASSIVES AND POWER AMPLIFIER 公开/授权日:2012-03-29
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