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US08980650B2 Perpendicular MTJ stacks with magnetic anisotropy enhancing layer and crystallization barrier layer 有权
具有磁各向异性增强层和结晶阻挡层的垂直MTJ叠层

Perpendicular MTJ stacks with magnetic anisotropy enhancing layer and crystallization barrier layer
Abstract:
Magnetic tunnel junctions (MTJ) suitable for spin transfer torque memory (STTM) devices, include perpendicular magnetic layers and one or more anisotropy enhancing layer(s) separated from a free magnetic layer by a crystallization barrier layer. In embodiments, an anisotropy enhancing layer improves perpendicular orientation of the free magnetic layer while the crystallization barrier improves tunnel magnetoresistance (TMR) ratio with better alignment of crystalline texture of the free magnetic layer with that of a tunneling layer.
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