Invention Grant
US08980650B2 Perpendicular MTJ stacks with magnetic anisotropy enhancing layer and crystallization barrier layer
有权
具有磁各向异性增强层和结晶阻挡层的垂直MTJ叠层
- Patent Title: Perpendicular MTJ stacks with magnetic anisotropy enhancing layer and crystallization barrier layer
- Patent Title (中): 具有磁各向异性增强层和结晶阻挡层的垂直MTJ叠层
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Application No.: US14454682Application Date: 2014-08-07
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Publication No.: US08980650B2Publication Date: 2015-03-17
- Inventor: Kaan Oguz , Mark L. Doczy , Brian Doyle , Uday Shah , David L. Kencke , Roksana Golizadeh Mojarad , Robert S. Chau
- Applicant: Kaan Oguz , Mark L. Doczy , Brian Doyle , Uday Shah , David L. Kencke , Roksana Golizadeh Mojarad , Robert S. Chau
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L43/12 ; H01L43/08 ; H01L29/82 ; H01L27/22 ; H01L43/10 ; H01F10/32 ; H01F10/193 ; G11C11/16
Abstract:
Magnetic tunnel junctions (MTJ) suitable for spin transfer torque memory (STTM) devices, include perpendicular magnetic layers and one or more anisotropy enhancing layer(s) separated from a free magnetic layer by a crystallization barrier layer. In embodiments, an anisotropy enhancing layer improves perpendicular orientation of the free magnetic layer while the crystallization barrier improves tunnel magnetoresistance (TMR) ratio with better alignment of crystalline texture of the free magnetic layer with that of a tunneling layer.
Public/Granted literature
- US20140349415A1 PERPENDICULAR MTJ STACKS WITH MAGNETIC ANISOTROPY ENHANCING LAYER AND CRYSTALLIZATION BARRIER LAYER Public/Granted day:2014-11-27
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