发明授权
US08981506B1 Magnetic random access memory with switchable switching assist layer
有权
具有切换辅助层的磁性随机存取存储器
- 专利标题： Magnetic random access memory with switchable switching assist layer
- 专利标题（中）： 具有切换辅助层的磁性随机存取存储器
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申请号： US13921549申请日： 2013-06-19
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公开(公告)号： US08981506B1公开(公告)日： 2015-03-17
- 发明人: Yuchen Zhou , Yiming Huai , Jing Zhang , Rajiv Yadav Ranjan , Roger Klas Malmhall
- 申请人： Avalanche Technology, Inc.
- 申请人地址： US CA Fremont
- 专利权人： Avalanche Technology, Inc.
- 当前专利权人： Avalanche Technology, Inc.
- 当前专利权人地址： US CA Fremont
- 代理商 Maryam Imam; Bing K. Yen
- 主分类号： H01L29/82
- IPC分类号： H01L29/82 ; H01L43/10 ; H01L43/02
摘要：
A perpendicular spin-transfer torque magnetic random access memory (STTMRAM) element is configured to store a state when electrical current is applied thereto. The perpendicular STTMRAM element includes a magnetization layer having a first free layer and a second free layer, separated by a non-magnetic separation layer (NMSL). The direction of magnetization of the first and second free layers each is in-plane prior to the application of electrical current and after the application of electrical current, the direction of magnetization of the second free layer becomes substantially titled out-of-plane and the direction of magnetization of the first free layer switches. Upon electrical current being discontinued, the direction of magnetization of the second free layer remains in a direction that is substantially opposite to that of the first free layer.
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