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公开(公告)号：US20250063952A1
公开(公告)日：2025-02-20
申请号：US18927997
申请日：2024-10-26
Applicant: Avalanche Technology, Inc.
Inventor： Zihui Wang , Yiming Huai
IPC: H10N50/10 , B82Y40/00 , G11C11/15 , G11C11/16 , H01F10/32 , H01F41/30 , H01L29/66 , H10B61/00 , H10N50/80 , H10N50/85
Abstract: A magnetic memory element including first and second magnetic free layers having a variable magnetization direction substantially perpendicular to layer planes thereof; a first perpendicular enhancement layer (PEL) interposed between the first and second magnetic free layers; first and second magnetic reference layers having a first invariable magnetization direction substantially perpendicular to layer planes thereof; a second PEL interposed between the first and second magnetic reference layers; an insulating tunnel junction layer formed between the first magnetic free layer and reference layer; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer; a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer and having a second invariable magnetization direction substantially opposite to the first invariable magnetization direction; and a cap layer formed adjacent to the second magnetic free layer and comprising iron, oxygen, and a metal element.
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公开(公告)号：US12133395B2
公开(公告)日：2024-10-29
申请号：US18241856
申请日：2023-09-02
Applicant: Avalanche Technology, Inc.
Inventor： Zihui Wang , Yiming Huai
Abstract: The present invention is directed to a perpendicular magnetic structure including a seed layer structure that includes a first seed layer comprising a metal element and oxygen; a second seed layer formed on top of the first seed layer and comprising cobalt, iron, and boron; and a third seed layer formed on top of the second seed layer and comprising chromium. The metal element is one of titanium, tantalum, or magnesium. The perpendicular magnetic structure further includes a magnetic fixed layer structure formed on top of the seed layer structure and having an invariable magnetization direction substantially perpendicular to a layer plane of the magnetic fixed layer structure. The magnetic fixed layer structure includes layers of a magnetic material interleaved with layers of a transition metal. The magnetic material includes cobalt. The transition metal is one of nickel, platinum, palladium, or iridium.
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公开(公告)号：US20230413577A1
公开(公告)日：2023-12-21
申请号：US18241856
申请日：2023-09-02
Applicant: Avalanche Technology, Inc.
Inventor： Zihui Wang , Yiming Huai
Abstract: The present invention is directed to a perpendicular magnetic structure including a seed layer structure that includes a first seed layer comprising a metal element and oxygen; a second seed layer formed on top of the first seed layer and comprising cobalt, iron, and boron; and a third seed layer formed on top of the second seed layer and comprising chromium. The metal element is one of titanium, tantalum, or magnesium. The perpendicular magnetic structure further includes a magnetic fixed layer structure formed on top of the seed layer structure and having an invariable magnetization direction substantially perpendicular to a layer plane of the magnetic fixed layer structure. The magnetic fixed layer structure includes layers of a magnetic material interleaved with layers of a transition metal. The magnetic material includes cobalt. The transition metal is one of nickel, platinum, palladium, or iridium.
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公开(公告)号：US10727400B2
公开(公告)日：2020-07-28
申请号：US16112323
申请日：2018-08-24
Applicant: Avalanche Technology, Inc.
Inventor： Zihui Wang , Yiming Huai , Huadong Gan , Yuchen Zhou
IPC: H01L43/08 , G11C11/15 , G11C11/16 , H01L43/02 , H01L43/10 , H01F10/32 , H01F41/30 , H01L27/22 , H01L29/66 , B82Y40/00
Abstract: The present invention is directed to a magnetic memory element including a magnetic free layer structure having a variable magnetization direction perpendicular to a layer plane thereof; a non-magnetic metal layer formed adjacent to the magnetic free layer structure; an oxide layer formed adjacent to the non-magnetic metal layer; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure opposite the non-magnetic metal layer; a first magnetic reference layer formed adjacent to the insulating tunnel junction layer; a second magnetic reference layer separated from the first magnetic reference layer by a perpendicular enhancement layer; an antiferromagnetic coupling layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer structure formed adjacent to the antiferromagnetic coupling layer. The first and second magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof. The magnetic fixed layer structure has a second invariable magnetization direction substantially opposite to the first invariable magnetization direction.
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公开(公告)号：US10438997B2
公开(公告)日：2019-10-08
申请号：US16287987
申请日：2019-02-27
Applicant: Avalanche Technology, Inc.
Inventor： Zihui Wang , Yiming Huai
Abstract: The present invention is directed to a magnetic structure including a first seed layer, which is made of a first transition metal, formed on top of a second seed layer comprising cobalt, iron, and boron; and a magnetic fixed layer structure formed on top of the first seed layer and having a first invariable magnetization direction substantially perpendicular to a layer plane thereof. The magnetic fixed layer structure includes layers of a first magnetic material interleaved with layers of a second transition metal. The first transition metal may be chromium or iridium. The second transition metal may be nickel, platinum, palladium, or iridium. The second seed layer which comprises cobalt, iron, and boron, may have a noncrystalline structure. Moreover, the second seed layer may be non-magnetic or superparamagnetic. The magnetic structure may further includes a third seed layer, which may comprise tantalum, formed adjacent to the second seed layer opposite the first seed layer.
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Patent Agency Ranking
公开(公告)号：US20190006414A1
公开(公告)日：2019-01-03
申请号：US16101325
申请日：2018-08-10
Applicant: Avalanche Technology, Inc.
Inventor： Yiming Huai , Bing K. Yen , Huadong Gan
CPC classification number: H01L27/226 , G11C11/161 , H01L27/228 , H01L43/02 , H01L43/08 , H01L43/10
Abstract: The present invention is directed to a magnetic structure, which includes a magnetic fixed layer structure formed on top of a seed layer structure. The seed layer structure includes one or more layers of a first transition metal, which may be platinum, palladium, nickel, or iridium, interleaved with one or more layers of a second transition metal, which may be tantalum, titanium, vanadium, molybdenum, chromium, tungsten, zirconium, hafnium, or niobium. The magnetic fixed layer structure has a first invariable magnetization direction substantially perpendicular to a layer plane thereof and includes layers of a first magnetic material interleaved with layers of the first transition metal. The first magnetic material may be made of cobalt.
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公开(公告)号：US10032979B2
公开(公告)日：2018-07-24
申请号：US15816160
申请日：2017-11-17
Applicant: Avalanche Technology, Inc.
Inventor： Huadong Gan , Yiming Huai , Yuchen Zhou , Zihui Wang , Bing K. Yen , Xiaojie Hao , Pengfa Xu
IPC: H01L43/08 , H01F10/32 , G11C11/16 , H01F41/30 , H01L29/66 , H01L43/10 , H01L27/22 , H01L43/02 , B82Y40/00
Abstract: The present invention is directed to a magnetic memory element including a magnetic free layer structure having a variable magnetization direction perpendicular to a layer plane thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a first magnetic reference layer comprising cobalt, iron, and boron formed adjacent to the insulating tunnel junction layer; a second magnetic reference layer comprising cobalt separated from the first magnetic reference layer by a molybdenum layer; an iridium layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer structure formed adjacent to the iridium layer. The magnetic free layer structure includes a first and a second magnetic free layers with a perpendicular enhancement layer interposed therebetween. The first and second magnetic reference layers have a first invariable magnetization direction perpendicular to layer planes thereof. The magnetic fixed layer structure has a second invariable magnetization direction opposite to the first invariable magnetization direction.
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公开(公告)号：US09780300B2
公开(公告)日：2017-10-03
申请号：US15365371
申请日：2016-11-30
Applicant: Avalanche Technology, Inc.
Inventor： Yuchen Zhou , Bing K. Yen , Huadong Gan , Yiming Huai
IPC: H01L43/08 , H01L43/02 , H01F10/32 , G11C11/16 , H01F41/30 , H01L29/66 , H01L43/10 , H01L27/22 , B82Y40/00
CPC classification number: H01L43/08 , B82Y40/00 , G11C11/161 , H01F10/3286 , H01F10/329 , H01F41/302 , H01L27/228 , H01L29/66984 , H01L43/02 , H01L43/10
Abstract: The present invention is directed to an MTJ memory element comprising a magnetic free layer structure including one or more magnetic free layers that have a variable magnetization direction substantially perpendicular to layer planes thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a magnetic reference layer structure including a first magnetic reference layer and a second magnetic reference layer with a perpendicular enhancement layer interposed therebetween, the first and second magnetic reference layers having a first fixed magnetization direction substantially perpendicular to layer planes thereof; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer. The non-magnetic perpendicular enhancement layer includes a first perpendicular enhancement sublayer formed adjacent to the first magnetic reference layer and a second perpendicular enhancement sublayer formed adjacent to the second magnetic reference layer.
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9.发明授权公开(公告)号：US09679625B2
公开(公告)日：2017-06-13
申请号：US14930523
申请日：2015-11-02
Applicant: Avalanche Technology, Inc.
Inventor： Jing Zhang , Yiming Huai , Rajiv Yadav Ranjan , Yuchen Zhou , Zihui Wang , Xiaojie Hao
CPC classification number: G11C11/161 , G11C11/16 , G11C11/1675 , H01L43/02 , H01L43/08 , H01L43/10
Abstract: An STTMRAM element includes a magnetic tunnel junction (MTJ) having a perpendicular magnetic orientation. The MTJ includes a barrier layer, a free layer formed on top of the barrier layer and having a magnetic orientation that is perpendicular and switchable relative to the magnetic orientation of the fixed layer. The magnetic orientation of the free layer switches when electrical current flows through the STTMRAM element. A switching-enhancing layer (SEL), separated from the free layer by a spacer layer, is formed on top of the free layer and has an in-plane magnetic orientation and generates magneto-static fields onto the free layer, causing the magnetic moments of the outer edges of the free layer to tilt with an in-plane component while minimally disturbing the magnetic moment at the center of the free layer to ease the switching of the free layer and to reduce the threshold voltage/current.
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公开(公告)号：US20170162781A1
公开(公告)日：2017-06-08
申请号：US15440948
申请日：2017-02-23
Applicant: Avalanche Technology, Inc.
Inventor： Yuchen Zhou , Zihui Wang , Huadong Gan , Yiming Huai
CPC classification number: H01L43/02 , B82Y25/00 , G11C11/161 , H01F10/14 , H01F10/16 , H01F10/3222 , H01F10/3254 , H01F10/3286 , H01F10/329 , H01F41/302 , H01F41/307 , H01L27/222 , H01L27/228 , H01L29/66984 , H01L43/08 , H01L43/10
Abstract: The present invention is directed to an STT-MRAM device comprising a plurality of memory elements. Each of the memory elements includes an MTJ structure that comprises a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween; a first perpendicular enhancement layer (PEL) formed adjacent to the magnetic free layer structure; a magnetic dead layer formed adjacent to the first PEL; and a magnetic fixed layer exchange coupled to the magnetic reference layer structure through an anti-ferromagnetic coupling layer. The magnetic reference layer structure includes a first magnetic reference layer formed adjacent to the insulating tunnel junction layer and a second magnetic reference layer separated from the first magnetic reference layer by a second PEL. The first and second magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof.
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