发明授权
- 专利标题: Low forward voltage drop transient voltage suppressor and method of fabricating
- 专利标题(中): 低正向压降瞬态电压抑制器及其制造方法
-
申请号: US13366944申请日: 2012-02-06
-
公开(公告)号: US08982524B2公开(公告)日: 2015-03-17
- 发明人: Lung-Ching Kao , Pu-Ju Kung , Yu-Ju Yu
- 申请人: Lung-Ching Kao , Pu-Ju Kung , Yu-Ju Yu
- 申请人地址: US NY Hauppauge
- 专利权人: Vishay General Semiconductor, LLC
- 当前专利权人: Vishay General Semiconductor, LLC
- 当前专利权人地址: US NY Hauppauge
- 代理机构: Volpe and Koenig, P.C.
- 主分类号: H02H3/22
- IPC分类号: H02H3/22 ; H01L29/868 ; H01L27/08 ; H01L29/861 ; H01L29/872 ; H02H3/20 ; H02H9/04
摘要:
A low forward voltage drop transient voltage suppressor utilizes a low-reverse-voltage-rated PN diode electrically connected in parallel to a high-reverse-voltage-rated Schottky rectifier in a single integrated circuit device. The transient voltage suppressor is ideally suited to fix the problem of high forward voltage drop of PN diodes and high leakage of low reverse breakdown of Schottky rectifiers. The low-reverse-voltage PN rectifier can be fabricated through methods such as 1) double layers of epi (with higher concentration layer epi in the bottom) or 2) punch through design of PN diode by base with compression.
公开/授权文献
信息查询