公开(公告)号：US20120200975A1

公开(公告)日：2012-08-09

申请号：US13366944

申请日：2012-02-06

申请人： Lung-Ching Kao ,  Pu-Ju Kung ,  Yu-Ju Yu

发明人： Lung-Ching Kao ,  Pu-Ju Kung ,  Yu-Ju Yu

IPC分类号： H02H3/22 ,  H01R43/00

CPC分类号： H01L29/868 ,  H01L27/0814 ,  H01L27/0817 ,  H01L29/861 ,  H01L29/872 ,  Y10T29/49117 ,  Y10T29/49169 ,  Y10T29/49171

摘要： A low forward voltage drop transient voltage suppressor utilizes a low-reverse-voltage-rated PN diode electrically connected in parallel to a high-reverse-voltage-rated Schottky rectifier in a single integrated circuit device. The transient voltage suppressor is ideally suited to fix the problem of high forward voltage drop of PN diodes and high leakage of low reverse breakdown of Schottky rectifiers. The low-reverse-voltage PN rectifier can be fabricated through methods such as 1) double layers of epi (with higher concentration layer epi in the bottom) or 2) punch through design of PN diode by base with compression.

摘要翻译： 低正向压降瞬态电压抑制器利用在单个集成电路器件中与高反向电压额定肖特基整流器并联电连接的低反向电压额定PN二极管。 瞬态电压抑制器非常适合固定PN二极管的高正向压降和肖特基整流器低反向击穿的高泄漏问题。 低反向电压PN整流器可以通过以下方法制造：1）双层epi（底部具有较高浓度层epi）或2）通过压缩的基极通过PN二极管的穿孔设计。

公开(公告)号：US07755102B2

公开(公告)日：2010-07-13

申请号：US11542420

申请日：2006-10-03

申请人： Lung-Ching Kao ,  Pu-Ju Kung

发明人： Lung-Ching Kao ,  Pu-Ju Kung

IPC分类号： H01L29/74 ,  H01L21/332

CPC分类号： H01L29/87 ,  H01L29/0661

摘要： A multiple layer overvoltage protection device is provided. The method begins by providing a substrate having a first impurity concentration of a first conductivity type to define a mid-region layer. A dopant of a second conductivity type is introduced into the substrate with a second impurity concentration less than the first impurity concentration. An upper base region having a second type of conductivity is formed on the upper surface of the mid-region layer. A lower base region layer having a second type of conductivity is formed on a lower surface of the mid-region layer. A first emitter region having a first type of conductivity is formed on a surface of the upper base region layer. A first metal contact is coupled to the upper base region layer and a second metal contact is coupled to the lower base region layer.

摘要翻译： 提供多层过电压保护装置。 该方法开始于提供具有第一导电类型的第一杂质浓度的衬底以限定中间区域层。 将第二导电类型的掺杂剂引入到具有小于第一杂质浓度的第二杂质浓度的衬底中。 在中区域层的上表面上形成具有第二导电类型的上基区。 在中区域层的下表面上形成具有第二导电类型的下基底区域。 具有第一类型的导电性的第一发射极区域形成在上部基极区域的表面上。 第一金属触点耦合到上基极区域层，第二金属触点耦合到下基极区域层。

公开(公告)号：US20060216913A1

公开(公告)日：2006-09-28

申请号：US11090897

申请日：2005-03-25

申请人： Pu-ju Kung ,  Chun-jen Huang ,  Lung-ching Kao ,  Hung-jieu Peng

发明人： Pu-ju Kung ,  Chun-jen Huang ,  Lung-ching Kao ,  Hung-jieu Peng

IPC分类号： H01L21/20 ,  H01L21/22 ,  H01G9/20

CPC分类号： H01L29/861 ,  H01L27/0255 ,  H01L29/0607 ,  H01L29/0661 ,  H01L29/86 ,  H01L29/8618

摘要： A bi-directional transient voltage suppression device and a method of making same is provided. The method begins by providing a semiconductor substrate of a first conductivity type, and depositing a first epitaxial layer of a second conductivity type opposite the first conductivity type on the substrate. The substrate and the first epitaxial layer form a first p-n junction. A second epitaxial layer having the second conductivity type is deposited on the first epitaxial layer. The second epitaxial layer has a higher dopant concentration than the first epitaxial layer. A third layer having the first conductivity type is formed on the second epitaxial layer. The second epitaxial layer and the third layer form a second p-n junction.

摘要翻译： 提供双向瞬时电压抑制装置及其制造方法。 该方法开始于提供第一导电类型的半导体衬底，并且在衬底上沉积与第一导电类型相反的第二导电类型的第一外延层。 衬底和第一外延层形成第一p-n结。 具有第二导电类型的第二外延层沉积在第一外延层上。 第二外延层具有比第一外延层更高的掺杂剂浓度。 具有第一导电类型的第三层形成在第二外延层上。 第二外延层和第三层形成第二p-n结。

公开(公告)号：US08014117B2

公开(公告)日：2011-09-06

申请号：US11820547

申请日：2007-06-20

申请人： Lung-Ching Kao ,  Pu-Ju Kung ,  Yu-Ju Yu

发明人： Lung-Ching Kao ,  Pu-Ju Kung ,  Yu-Ju Yu

IPC分类号： H02H3/22 ,  H02H3/20 ,  H02H9/04

摘要： A low forward voltage drop transient voltage suppressor utilizes a low-reverse-voltage-rated PN diode electrically connected in parallel to a high-reverse-voltage-rated Schottky rectifier in a single integrated circuit device. The transient voltage suppressor is ideally suited to fix the problem of high forward voltage drop of PN diodes and high leakage of low reverse breakdown of Schottky rectifiers. The low-reverse-voltage PN rectifier can be fabricated through methods such as 1) double layers of epi (with higher concentration layer epi in the bottom) or 2) punch through design of PN diode by base with compression.

公开(公告)号：US20080013240A1

公开(公告)日：2008-01-17

申请号：US11820547

申请日：2007-06-20

申请人： Lung-Ching Kao ,  Pu-Ju Kung ,  Yu-Ju Yu

发明人： Lung-Ching Kao ,  Pu-Ju Kung ,  Yu-Ju Yu

IPC分类号： H02H3/22 ,  H05K13/04

CPC分类号： H01L29/868 ,  H01L27/0814 ,  H01L27/0817 ,  H01L29/861 ,  H01L29/872 ,  Y10T29/49117 ,  Y10T29/49169 ,  Y10T29/49171

摘要： A low forward voltage drop transient voltage suppressor utilizes a low-reverse-voltage-rated PN diode electrically connected in parallel to a high-reverse-voltage-rated Schottky rectifier in a single integrated circuit device. The transient voltage suppressor is ideally suited to fix the problem of high forward voltage drop of PN diodes and high leakage of low reverse breakdown of Schottky rectifiers. The low-reverse-voltage PN rectifier can be fabricated through methods such as 1) double layers of epi (with higher concentration layer epi in the bottom) or 2) punch through design of PN diode by base with compression.

摘要翻译： 低正向压降瞬态电压抑制器利用在单个集成电路器件中与高反向电压额定肖特基整流器并联电连接的低反向电压额定PN二极管。 瞬态电压抑制器非常适合固定PN二极管的高正向压降和肖特基整流器低反向击穿的高泄漏问题。 低反向电压PN整流器可以通过以下方法制造：1）双层epi（底部具有较高浓度层epi）或2）通过压缩的基极通过PN二极管的穿孔设计。

公开(公告)号：US20080079020A1

公开(公告)日：2008-04-03

申请号：US11542420

申请日：2006-10-03

申请人： Lung-Ching Kao ,  Pu-Ju Kung

发明人： Lung-Ching Kao ,  Pu-Ju Kung

IPC分类号： H01L29/74

CPC分类号： H01L29/87 ,  H01L29/0661

摘要： A multiple layer overvoltage protection device is provided. The method begins by providing a substrate having a first impurity concentration of a first conductivity type to define a mid-region layer. A dopant of a second conductivity type is introduced into the substrate with a second impurity concentration less than the first impurity concentration. An upper base region having a second type of conductivity is formed on the upper surface of the mid-region layer. A lower base region layer having a second type of conductivity is formed on a lower surface of the mid-region layer. A first emitter region having a first type of conductivity is formed on a surface of the upper base region layer. A first metal contact is coupled to the upper base region layer and a second metal contact is coupled to the lower base region layer.

摘要翻译： 提供多层过电压保护装置。 该方法开始于提供具有第一导电类型的第一杂质浓度的衬底以限定中间区域层。 将第二导电类型的掺杂剂引入到具有小于第一杂质浓度的第二杂质浓度的衬底中。 在中区域层的上表面上形成具有第二导电类型的上基区。 在中区域层的下表面上形成具有第二导电类型的下基底区域。 具有第一类型的导电性的第一发射极区域形成在上部基极区域的表面上。 第一金属触点耦合到上基极区域层，第二金属触点耦合到下基极区域层。

公开(公告)号：US08982524B2

公开(公告)日：2015-03-17

申请号：US13366944

申请日：2012-02-06

申请人： Lung-Ching Kao ,  Pu-Ju Kung ,  Yu-Ju Yu

发明人： Lung-Ching Kao ,  Pu-Ju Kung ,  Yu-Ju Yu

IPC分类号： H02H3/22 ,  H01L29/868 ,  H01L27/08 ,  H01L29/861 ,  H01L29/872 ,  H02H3/20 ,  H02H9/04

CPC分类号： H01L29/868 ,  H01L27/0814 ,  H01L27/0817 ,  H01L29/861 ,  H01L29/872 ,  Y10T29/49117 ,  Y10T29/49169 ,  Y10T29/49171

摘要： A low forward voltage drop transient voltage suppressor utilizes a low-reverse-voltage-rated PN diode electrically connected in parallel to a high-reverse-voltage-rated Schottky rectifier in a single integrated circuit device. The transient voltage suppressor is ideally suited to fix the problem of high forward voltage drop of PN diodes and high leakage of low reverse breakdown of Schottky rectifiers. The low-reverse-voltage PN rectifier can be fabricated through methods such as 1) double layers of epi (with higher concentration layer epi in the bottom) or 2) punch through design of PN diode by base with compression.

摘要翻译： 低正向压降瞬态电压抑制器利用在单个集成电路器件中与高反向电压额定肖特基整流器并联电连接的低反向电压额定PN二极管。 瞬态电压抑制器非常适合固定PN二极管的高正向压降和肖特基整流器低反向击穿的高泄漏问题。 低反向电压PN整流器可以通过以下方法制造：1）双层epi（底部具有较高浓度层epi）或2）通过压缩的基极通过PN二极管的穿孔设计。

公开(公告)号：US08111495B2

公开(公告)日：2012-02-07

申请号：US11820547

申请日：2007-06-20

申请人： Lung-Ching Kao ,  Pu-Ju Kung ,  Yu-Ju Yu

发明人： Lung-Ching Kao ,  Pu-Ju Kung ,  Yu-Ju Yu

IPC分类号： H02H3/22 ,  H02H3/20 ,  H02H9/04

CPC分类号： H01L29/868 ,  H01L27/0814 ,  H01L27/0817 ,  H01L29/861 ,  H01L29/872 ,  Y10T29/49117 ,  Y10T29/49169 ,  Y10T29/49171

摘要： A low forward voltage drop transient voltage suppressor utilizes a low-reverse-voltage-rated PN diode electrically connected in parallel to a high-reverse-voltage-rated Schottky rectifier in a single integrated circuit device. The transient voltage suppressor is ideally suited to fix the problem of high forward voltage drop of PN diodes and high leakage of low reverse breakdown of Schottky rectifiers. The low-reverse-voltage PN rectifier can be fabricated through methods such as 1) double layers of epi (with higher concentration layer epi in the bottom) or 2) punch through design of PN diode by base with compression.

摘要翻译： 低正向压降瞬态电压抑制器利用在单个集成电路器件中与高反向电压额定肖特基整流器并联电连接的低反向电压额定PN二极管。 瞬态电压抑制器非常适合固定PN二极管的高正向压降和肖特基整流器低反向击穿的高泄漏问题。 低反向电压PN整流器可以通过以下方法制造：1）双层epi（底部具有较高浓度层epi）或2）通过压缩的基极通过PN二极管的穿孔设计。

公开(公告)号：US07560355B2

公开(公告)日：2009-07-14

申请号：US11585469

申请日：2006-10-24

申请人： Lung-Ching Kao ,  Pu-Ju Kung

发明人： Lung-Ching Kao ,  Pu-Ju Kung

IPC分类号： H01L21/8222

CPC分类号： H01L29/861 ,  H01L21/2253 ,  H01L29/06

摘要： A method is provided of making a semiconductor wafer for a semiconductor junction diode device having a target forward voltage drop and a target reverse breakdown voltage. The method begins by doping a semiconductor substrate of a first conductivity type through the back surface with a first dopant of the first conductivity type in an amount sufficient to form a semiconductor junction diode device having a target forward voltage drop. Next, the substrate is doped through the front surface with a second dopant of the first conductivity type in an amount sufficient to form the semiconductor junction diode device such that it has a target reverse breakdown voltage.

摘要翻译： 提供一种制造具有目标正向压降和目标反向击穿电压的半导体结二极管器件的半导体晶片的方法。 该方法开始于通过后表面掺杂具有第一导电类型的第一掺杂剂的第一导电类型的半导体衬底，其量足以形成具有目标正向压降的半导体结二极管器件。 接下来，衬底通过前表面掺杂有第一导电类型的第二掺杂剂，其量足以形成半导体结二极管器件，使其具有目标反向击穿电压。

公开(公告)号：US20080096360A1

公开(公告)日：2008-04-24

申请号：US11585469

申请日：2006-10-24

申请人： Lung-Ching Kao ,  Pu-Ju Kung

发明人： Lung-Ching Kao ,  Pu-Ju Kung

IPC分类号： H01L21/8222

CPC分类号： H01L29/861 ,  H01L21/2253 ,  H01L29/06

摘要： A method is provided of making a semiconductor wafer for a semiconductor junction diode device having a target forward voltage drop and a target reverse breakdown voltage. The method begins by doping a semiconductor substrate of a first conductivity type through the back surface with a first dopant of the first conductivity type in an amount sufficient to form a semiconductor junction diode device having a target forward voltage drop. Next, the substrate is doped through the front surface with a second dopant of the first conductivity type in an amount sufficient to form the semiconductor junction diode device such that it has a target reverse breakdown voltage.

摘要翻译： 提供一种制造具有目标正向压降和目标反向击穿电压的半导体结二极管器件的半导体晶片的方法。 该方法开始于通过后表面掺杂具有第一导电类型的第一掺杂剂的第一导电类型的半导体衬底，其量足以形成具有目标正向压降的半导体结二极管器件。 接下来，衬底通过前表面掺杂有第一导电类型的第二掺杂剂，其量足以形成半导体结二极管器件，使其具有目标反向击穿电压。