Invention Grant
- Patent Title: Metal barrier-doped metal contact layer
- Patent Title (中): 金属阻挡掺杂金属接触层
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Application No.: US13615128Application Date: 2012-09-13
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Publication No.: US08987587B2Publication Date: 2015-03-24
- Inventor: Long Cheng , Akhlesh Gupta , Anke Abken , Benyamin Buller
- Applicant: Long Cheng , Akhlesh Gupta , Anke Abken , Benyamin Buller
- Applicant Address: US OH Perrysburg
- Assignee: First Solar, Inc.
- Current Assignee: First Solar, Inc.
- Current Assignee Address: US OH Perrysburg
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L21/00 ; H01L31/0296 ; H01L31/18 ; H01L31/0224 ; H01L31/073
Abstract:
A photovoltaic device can include an intrinsic metal layer adjacent to a semiconductor absorber layer; and a doped metal contact layer adjacent to the intrinsic metal layer, where the doped metal contact layer includes a metal base material and a dopant.
Public/Granted literature
- US20130005075A1 METAL BARRIER-DOPED METAL CONTACT LAYER Public/Granted day:2013-01-03
Information query
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