Invention Grant
US08995203B2 Non-volatile memory device, driving method of memory controller controlling the non-volatile memory device and memory system including the memory controller and the non-volatile memory device
有权
非易失性存储器件，控制非易失性存储器件的存储器控制器的驱动方法和包括存储器控制器和非易失性存储器件的存储器系统
- Patent Title: Non-volatile memory device, driving method of memory controller controlling the non-volatile memory device and memory system including the memory controller and the non-volatile memory device
- Patent Title (中): 非易失性存储器件，控制非易失性存储器件的存储器控制器的驱动方法和包括存储器控制器和非易失性存储器件的存储器系统
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Application No.: US14077851Application Date: 2013-11-12
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Publication No.: US08995203B2Publication Date: 2015-03-31
- Inventor: Young-Hoon Oh , Du-Eung Kim , Woo-Yeong Cho
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2012-0144546 20121212
- Main IPC: G11C16/06
- IPC: G11C16/06 ; G11C13/00
Abstract:
The present inventive concept provides a driving method of memory controller controlling nonvolatile memory device using variable resistive element. The memory controller may control a plurality of first memory devices and a second memory device. A number of write drivers in the second memory device may be driven when a number of first memory devices among the plurality of first memory devices are used. A different number of write drivers in the second memory device may be driven when a different number of first memory devices among the plurality of first memory devices are used.
Public/Granted literature
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