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1.发明申请Non-Volatile Memory Device, Driving Method of Memory Controller Controlling the Non-Volatile Memory Device and Memory System Including the Memory Controller and the Non-Volatile Memory Device 有权非易失性存储器件，存储器控制器的驱动方法控制非易失性存储器件和包括存储器控制器和非易失性存储器件的存储器系统公开(公告)号：US20140160857A1
公开(公告)日：2014-06-12
申请号：US14077851
申请日：2013-11-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Young-Hoon Oh , Du-Eung Kim , Woo-Yeong Cho
CPC classification number: G11C16/06 , G11C13/0004 , G11C13/0069 , G11C2013/0088
Abstract: The present inventive concept provides a driving method of memory controller controlling nonvolatile memory device using variable resistive element. The memory controller may control a plurality of first memory devices and a second memory device. A number of write drivers in the second memory device may be driven when a number of first memory devices among the plurality of first memory devices are used. A different number of write drivers in the second memory device may be driven when a different number of first memory devices among the plurality of first memory devices are used.
Abstract translation: 本发明构思提供了使用可变电阻元件控制非易失性存储器件的存储器控制器的驱动方法。 存储器控制器可以控制多个第一存储器件和第二存储器件。 当使用多个第一存储器件中的多个第一存储器件时，可以驱动第二存储器件中的多个写入驱动器。 当使用多个第一存储器件中的不同数量的第一存储器件时，可以驱动第二存储器件中的不同数量的写入驱动器。
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公开(公告)号：US09472275B2
公开(公告)日：2016-10-18
申请号：US14698175
申请日：2015-04-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyun-Kook Park , Young-Hoon Oh , Dae-Seok Byeon , Yong-Kyu Lee , Hyo-Jin Kwon
CPC classification number: G11C13/004 , G06F11/00 , G06F11/1048 , G11C11/1659 , G11C11/1673 , G11C13/0004 , G11C13/0007 , G11C13/0033 , G11C2013/0045 , G11C2013/0054
Abstract: A memory device and a method of operating the memory device are provided for performing a read-retry operation. The method of operating the memory device includes starting a read-retry mode, reading data of multiple cell regions using different read conditions, and setting a final read condition for the cell regions according to results of data determination operations on data read from the cell regions.
Abstract translation: 提供了一种用于执行读取重试操作的存储器件和操作存储器件的方法。 操作存储装置的方法包括开始读取重试模式，使用不同的读取条件读取多个单元区域的数据，并且根据从单元区域读取的数据的数据确定操作的结果来设置单元区域的最终读取条件 。
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3.发明授权Non-volatile memory device, driving method of memory controller controlling the non-volatile memory device and memory system including the memory controller and the non-volatile memory device 有权非易失性存储器件，控制非易失性存储器件的存储器控制器的驱动方法和包括存储器控制器和非易失性存储器件的存储器系统公开(公告)号：US08995203B2
公开(公告)日：2015-03-31
申请号：US14077851
申请日：2013-11-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Young-Hoon Oh , Du-Eung Kim , Woo-Yeong Cho
CPC classification number: G11C16/06 , G11C13/0004 , G11C13/0069 , G11C2013/0088
Abstract: The present inventive concept provides a driving method of memory controller controlling nonvolatile memory device using variable resistive element. The memory controller may control a plurality of first memory devices and a second memory device. A number of write drivers in the second memory device may be driven when a number of first memory devices among the plurality of first memory devices are used. A different number of write drivers in the second memory device may be driven when a different number of first memory devices among the plurality of first memory devices are used.
Abstract translation: 本发明构思提供了使用可变电阻元件控制非易失性存储器件的存储器控制器的驱动方法。 存储器控制器可以控制多个第一存储器件和第二存储器件。 当使用多个第一存储器件中的多个第一存储器件时，可以驱动第二存储器件中的多个写入驱动器。 当使用多个第一存储器件中的不同数量的第一存储器件时，可以驱动第二存储器件中的不同数量的写入驱动器。
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