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1.发明申请Non-Volatile Memory Device, Driving Method of Memory Controller Controlling the Non-Volatile Memory Device and Memory System Including the Memory Controller and the Non-Volatile Memory Device 有权非易失性存储器件，存储器控制器的驱动方法控制非易失性存储器件和包括存储器控制器和非易失性存储器件的存储器系统公开(公告)号：US20140160857A1
公开(公告)日：2014-06-12
申请号：US14077851
申请日：2013-11-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Young-Hoon Oh , Du-Eung Kim , Woo-Yeong Cho
CPC classification number: G11C16/06 , G11C13/0004 , G11C13/0069 , G11C2013/0088
Abstract: The present inventive concept provides a driving method of memory controller controlling nonvolatile memory device using variable resistive element. The memory controller may control a plurality of first memory devices and a second memory device. A number of write drivers in the second memory device may be driven when a number of first memory devices among the plurality of first memory devices are used. A different number of write drivers in the second memory device may be driven when a different number of first memory devices among the plurality of first memory devices are used.
Abstract translation: 本发明构思提供了使用可变电阻元件控制非易失性存储器件的存储器控制器的驱动方法。 存储器控制器可以控制多个第一存储器件和第二存储器件。 当使用多个第一存储器件中的多个第一存储器件时，可以驱动第二存储器件中的多个写入驱动器。 当使用多个第一存储器件中的不同数量的第一存储器件时，可以驱动第二存储器件中的不同数量的写入驱动器。
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2.发明授权Non-volatile memory device, driving method of memory controller controlling the non-volatile memory device and memory system including the memory controller and the non-volatile memory device 有权非易失性存储器件，控制非易失性存储器件的存储器控制器的驱动方法和包括存储器控制器和非易失性存储器件的存储器系统公开(公告)号：US08995203B2
公开(公告)日：2015-03-31
申请号：US14077851
申请日：2013-11-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Young-Hoon Oh , Du-Eung Kim , Woo-Yeong Cho
CPC classification number: G11C16/06 , G11C13/0004 , G11C13/0069 , G11C2013/0088
Abstract: The present inventive concept provides a driving method of memory controller controlling nonvolatile memory device using variable resistive element. The memory controller may control a plurality of first memory devices and a second memory device. A number of write drivers in the second memory device may be driven when a number of first memory devices among the plurality of first memory devices are used. A different number of write drivers in the second memory device may be driven when a different number of first memory devices among the plurality of first memory devices are used.
Abstract translation: 本发明构思提供了使用可变电阻元件控制非易失性存储器件的存储器控制器的驱动方法。 存储器控制器可以控制多个第一存储器件和第二存储器件。 当使用多个第一存储器件中的多个第一存储器件时，可以驱动第二存储器件中的多个写入驱动器。 当使用多个第一存储器件中的不同数量的第一存储器件时，可以驱动第二存储器件中的不同数量的写入驱动器。
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3.发明申请公开(公告)号：US20190140022A1
公开(公告)日：2019-05-09
申请号：US16135315
申请日：2018-09-19
Applicant: Samsung Electronics Co., Ltd.
Inventor： JI-HYUN JEONG , Dae-Hwan Kang , Du-Eung Kim , Kwang-Jin Lee
Abstract: A memory device includes a first word line extending in a first direction on a substrate, a first bit line extending in a second direction on the first word line, a first memory cell disposed between the first word line and the first bit line, a second word line extending in the first direction on the first bit line, a second bit line extending in the second direction on the second word line, a second memory cell disposed between the second word line and the second bit line, and a first bit line connection structure connected to the first bit line and the second bit line. The first bit line connection structure includes a first bit line contact connected to the first bit line and a second bit line contact, which is connected to the second bit line and vertically overlaps the first bit line contact.
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