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1.发明授权公开(公告)号：US11410026B2
公开(公告)日：2022-08-09
申请号：US16191906
申请日：2018-11-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Woo-Yeong Cho , Seong-Il O , Hak-Soo Yu , Min-Su Choi
IPC: G06N3/063 , G06N3/04 , H01L27/24 , H01L25/065 , G06F15/163
Abstract: Provided are a neuromorphic circuit having a three-dimensional stack structure and a semiconductor device including the neuromorphic circuit. The semiconductor device includes a first semiconductor layer including one or more synaptic cores, each synaptic core including neural circuits arranged to perform neuromorphic computation. A second semiconductor layer is stacked on the first semiconductor layer and includes an interconnect forming a physical transfer path between synaptic cores. A third semiconductor layer is stacked on the second semiconductor layer and includes one or more synaptic cores. At least one through electrode is formed, through which information is transferred between the first through third semiconductor layers. Information from a first synaptic core in the first semiconductor layer is transferred to a second synaptic core in the third semiconductor layer via the one of more through electrodes and an interconnect of the second semiconductor layer.
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2.发明申请Non-Volatile Memory Device, Driving Method of Memory Controller Controlling the Non-Volatile Memory Device and Memory System Including the Memory Controller and the Non-Volatile Memory Device 有权非易失性存储器件，存储器控制器的驱动方法控制非易失性存储器件和包括存储器控制器和非易失性存储器件的存储器系统公开(公告)号：US20140160857A1
公开(公告)日：2014-06-12
申请号：US14077851
申请日：2013-11-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Young-Hoon Oh , Du-Eung Kim , Woo-Yeong Cho
CPC classification number: G11C16/06 , G11C13/0004 , G11C13/0069 , G11C2013/0088
Abstract: The present inventive concept provides a driving method of memory controller controlling nonvolatile memory device using variable resistive element. The memory controller may control a plurality of first memory devices and a second memory device. A number of write drivers in the second memory device may be driven when a number of first memory devices among the plurality of first memory devices are used. A different number of write drivers in the second memory device may be driven when a different number of first memory devices among the plurality of first memory devices are used.
Abstract translation: 本发明构思提供了使用可变电阻元件控制非易失性存储器件的存储器控制器的驱动方法。 存储器控制器可以控制多个第一存储器件和第二存储器件。 当使用多个第一存储器件中的多个第一存储器件时，可以驱动第二存储器件中的多个写入驱动器。 当使用多个第一存储器件中的不同数量的第一存储器件时，可以驱动第二存储器件中的不同数量的写入驱动器。
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3.发明授权Non-volatile memory device, driving method of memory controller controlling the non-volatile memory device and memory system including the memory controller and the non-volatile memory device 有权非易失性存储器件，控制非易失性存储器件的存储器控制器的驱动方法和包括存储器控制器和非易失性存储器件的存储器系统公开(公告)号：US08995203B2
公开(公告)日：2015-03-31
申请号：US14077851
申请日：2013-11-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Young-Hoon Oh , Du-Eung Kim , Woo-Yeong Cho
CPC classification number: G11C16/06 , G11C13/0004 , G11C13/0069 , G11C2013/0088
Abstract: The present inventive concept provides a driving method of memory controller controlling nonvolatile memory device using variable resistive element. The memory controller may control a plurality of first memory devices and a second memory device. A number of write drivers in the second memory device may be driven when a number of first memory devices among the plurality of first memory devices are used. A different number of write drivers in the second memory device may be driven when a different number of first memory devices among the plurality of first memory devices are used.
Abstract translation: 本发明构思提供了使用可变电阻元件控制非易失性存储器件的存储器控制器的驱动方法。 存储器控制器可以控制多个第一存储器件和第二存储器件。 当使用多个第一存储器件中的多个第一存储器件时，可以驱动第二存储器件中的多个写入驱动器。 当使用多个第一存储器件中的不同数量的第一存储器件时，可以驱动第二存储器件中的不同数量的写入驱动器。
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