Invention Grant
- Patent Title: Process for bonding two substrates
- Patent Title (中): 粘合两个基板的工艺
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Application No.: US13749471Application Date: 2013-01-24
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Publication No.: US08999090B2Publication Date: 2015-04-07
- Inventor: Gweltaz Gaudin , Fabrice Lallement , Cyrille Colnat , Pascale Giard
- Applicant: SOITEC
- Applicant Address: FR Bernin
- Assignee: SOITEC
- Current Assignee: SOITEC
- Current Assignee Address: FR Bernin
- Agency: TraskBritt
- Priority: EP08290150 20080215
- Main IPC: B32B37/00
- IPC: B32B37/00 ; H01L21/18 ; H01L21/67 ; H01L21/762
Abstract:
The invention relates to a method for bonding two substrates, in particular, two semiconductor substrates that, in order to be able to improve the reliability of the process, provides the step of providing a gaseous flow over the bonding surfaces of the substrates. The gaseous flow is preferably a laminar flow that is essentially parallel to the bonding surfaces of the substrates, and has a temperature in a range of from room temperature up to 100° C.
Public/Granted literature
- US20130139946A1 PROCESS FOR BONDING TWO SUBSTRATES Public/Granted day:2013-06-06
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