公开(公告)号：US08999090B2

公开(公告)日：2015-04-07

申请号：US13749471

申请日：2013-01-24

Applicant: SOITEC

Inventor： Gweltaz Gaudin ,  Fabrice Lallement ,  Cyrille Colnat ,  Pascale Giard

IPC: B32B37/00 ,  H01L21/18 ,  H01L21/67 ,  H01L21/762

CPC classification number: H01L21/187 ,  H01L21/67092 ,  H01L21/76251 ,  Y10T156/10

Abstract: The invention relates to a method for bonding two substrates, in particular, two semiconductor substrates that, in order to be able to improve the reliability of the process, provides the step of providing a gaseous flow over the bonding surfaces of the substrates. The gaseous flow is preferably a laminar flow that is essentially parallel to the bonding surfaces of the substrates, and has a temperature in a range of from room temperature up to 100° C.

Abstract translation: 本发明涉及一种用于接合两个基板，特别是两个半导体基板的方法，为了能够提高该工艺的可靠性，提供了在基板的接合表面上提供气流的步骤。 气流优选是基本上平行于基板的粘合表面的层流，并且具有在室温至100℃的范围内的温度。

公开(公告)号：US20130139946A1

公开(公告)日：2013-06-06

申请号：US13749471

申请日：2013-01-24

Applicant: SOITEC

Inventor： Gweltaz Gaudin ,  Fabrice Lallement ,  Cyrille Colnat ,  Pascale Giard

IPC: H01L21/18

CPC classification number: H01L21/187 ,  H01L21/67092 ,  H01L21/76251 ,  Y10T156/10

Abstract: The invention relates to a method for bonding two substrates, in particular two semiconductor substrates which, in order to be able to improve the reliability of the process, provides the step of providing a gaseous flow over the bonding surfaces of the substrates. The gaseous flow is preferably a laminar flow that is essentially parallel to the bonding surfaces of the substrates, and has a temperature in a range of from room temperature up to 100° C.

Abstract translation: 本发明涉及一种用于接合两个基板，特别是两个半导体基板的方法，为了能够提高该工艺的可靠性，提供了在基板的接合表面上提供气流的步骤。 气流优选是基本上平行于基板的粘合表面的层流，并且具有在室温至100℃的范围内的温度。