Invention Grant
US08999852B2 Substrate mask patterns, methods of forming a structure on a substrate, methods of forming a square lattice pattern from an oblique lattice pattern, and methods of forming a pattern on a substrate
有权
基板掩模图案，在基板上形成结构的方法，从倾斜格子图案形成正方形格子图案的方法，以及在基板上形成图案的方法
- Patent Title: Substrate mask patterns, methods of forming a structure on a substrate, methods of forming a square lattice pattern from an oblique lattice pattern, and methods of forming a pattern on a substrate
- Patent Title (中): 基板掩模图案，在基板上形成结构的方法，从倾斜格子图案形成正方形格子图案的方法，以及在基板上形成图案的方法
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Application No.: US13712806Application Date: 2012-12-12
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Publication No.: US08999852B2Publication Date: 2015-04-07
- Inventor: Vishal Sipani , Anton J. deVillers , William R. Brown , Shane J. Trapp , Ranjan Khurana , Kevin R. Shea
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John, P.S.
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/027 ; H01L21/033 ; H01L21/311
Abstract:
A method of forming a pattern on a substrate comprises forming spaced, upwardly-open, cylinder-like structures projecting longitudinally outward of a base. Sidewall lining is formed over inner and over outer sidewalls of the cylinder-like structures, and that forms interstitial spaces laterally outward of the cylinder-like structures. The interstitial spaces are individually surrounded by longitudinally-contacting sidewall linings that are over outer sidewalls of four of the cylinder-like structures. Other embodiments are disclosed, including structure independent of method.
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