An IDDQ test system and method that, in one embodiment, includes 1) an empirical extraction subsystem operable to generate an IDDQ versus temperature model for a given semiconductor device design, 2) an automatic test equipment (ATE) test subsystem operable to obtain a measured IDDQ value (IDDQm) at a measured temperature (Tm) for a specific semiconductor device embodying the given semiconductor device design, the measured temperature (Tm) obtained within 5 seconds of obtaining the measured IDDQ value (IDDQm), and 3) a scaling subsystem operable to scale the measured IDDQ value (IDDQm) at the measured temperature (Tm) to a compensated IDDQ value (IDDQc) at a desired temperature (Td) using the IDDQ versus temperature model.