公开(公告)号：US09007079B2

公开(公告)日：2015-04-14

申请号：US13667872

申请日：2012-11-02

Applicant: Nvidia Corporation

Inventor： Dushyant Narayen ,  Nerinder Singh ,  Gunaseelan Ponnuvel ,  Hemant Kumar ,  Luai Nasser ,  Craig Nishizaki

IPC: G01R31/26 ,  G01R31/30

CPC classification number: G01R31/3008

Abstract: An IDDQ test system and method that, in one embodiment, includes 1) an empirical extraction subsystem operable to generate an IDDQ versus temperature model for a given semiconductor device design, 2) an automatic test equipment (ATE) test subsystem operable to obtain a measured IDDQ value (IDDQm) at a measured temperature (Tm) for a specific semiconductor device embodying the given semiconductor device design, the measured temperature (Tm) obtained within 5 seconds of obtaining the measured IDDQ value (IDDQm), and 3) a scaling subsystem operable to scale the measured IDDQ value (IDDQm) at the measured temperature (Tm) to a compensated IDDQ value (IDDQc) at a desired temperature (Td) using the IDDQ versus temperature model.

Abstract translation: 一种IDDQ测试系统和方法，其在一个实施例中包括1）经验提取子系统，用于为给定的半导体器件设计产生IDDQ与温度模型，2）自动测试设备（ATE）测试子系统，可操作以获得测量的 以及实现给定半导体器件设计的特定半导体器件的测量温度（Tm）的IDDQ值（IDDQm），获得测量的IDDQ值（IDDQm）的5秒内获得的测量温度（Tm），以及3）缩放子系统 可操作以使用IDDQ对温度模型将测量温度（Tm）下的测量IDDQ值（IDDQm）缩放到所需温度（Td）下的补偿IDDQ值（IDDQc）。

公开(公告)号：US20140125364A1

公开(公告)日：2014-05-08

申请号：US13667872

申请日：2012-11-02

Applicant: NVIDIA CORPORATION

Inventor： Dushyant Narayen ,  Nerinder Singh ,  Gunaseelan Ponnuvel ,  Hemant Kumar ,  Luai Nasser ,  Craig Nishizaki

IPC: G01R31/26

CPC classification number: G01R31/3008

Abstract: An IDDQ test system and method that, in one embodiment,deg includes 1) an empirical extraction subsystem operable to generate an IDDQ versus temperature model for a given semiconductor device design, 2) an automatic test equipment (ATE) test subsystem operable to obtain a measured IDDQ value (IDDQm) at a measured temperature (Tm) for a specific semiconductor device embodying the given semiconductor device design, the measured temperature (Tm) obtained within 5 seconds of obtaining the measured IDDQ value (IDDQm), and 3) a scaling subsystem operable to scale the measured IDDQ value (IDDQm) at the measured temperature (Tm) to a compensated IDDQ value (IDDQc) at a desired temperature (Td) using the IDDQ versus temperature model.

Abstract translation: 一种IDDQ测试系统和方法，在一个实施例中，deg包括1）经验提取子系统，可操作以产生用于给定半导体器件设计的IDDQ对温度模型; 2）自动测试设备（ATE）测试子系统，可操作以获得 以及实现给定半导体器件设计的特定半导体器件的测量温度（Tm）的测量IDDQ值（IDDQm），获得测量的IDDQ值（IDDQm）后5秒内获得的测量温度（Tm），以及3）缩放 子系统可操作以使用IDDQ对温度模型将测量温度（Tm）下的测量IDDQ值（IDDQm）缩放到期望温度（Td）下的补偿IDDQ值（IDDQc）。