Invention Grant
US09007842B2 Retention detection and/or channel tracking policy in a flash memory based storage system 有权
基于闪存存储系统的保留检测和/或信道跟踪策略

Retention detection and/or channel tracking policy in a flash memory based storage system
Abstract:
A method for determining a retention time in a solid state device (SSD), comprising the steps of providing a plurality of write operations to a memory, determining a reference voltage for each of the write operations, determining a difference between (i) the reference voltage after each of the write operations and (ii) a target reference voltage and if the difference is above a predetermined value, generating a flag indicating an excessive retention has occurred.
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