Retention detection and/or channel tracking policy in a flash memory based storage system
    1.
    发明授权
    Retention detection and/or channel tracking policy in a flash memory based storage system 有权
    基于闪存存储系统的保留检测和/或信道跟踪策略

    公开(公告)号:US09007842B2

    公开(公告)日:2015-04-14

    申请号:US13832633

    申请日:2013-03-15

    CPC classification number: G11C16/10 G11C16/3459 G11C16/349

    Abstract: A method for determining a retention time in a solid state device (SSD), comprising the steps of providing a plurality of write operations to a memory, determining a reference voltage for each of the write operations, determining a difference between (i) the reference voltage after each of the write operations and (ii) a target reference voltage and if the difference is above a predetermined value, generating a flag indicating an excessive retention has occurred.

    Abstract translation: 一种用于确定固态设备(SSD)中的保留时间的方法,包括以下步骤:向存储器提供多个写入操作,为每个写入操作确定参考电压,确定(i)参考 每个写入操作之后的电压和(ii)目标参考电压,并且如果差异高于预定值,则产生指示过度保持的标志。

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