发明授权
- 专利标题： Method for electron beam induced etching
- 专利标题（中）： 电子束感应蚀刻方法
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申请号： US13058587申请日： 2009-08-13
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公开(公告)号： US09023666B2公开(公告)日： 2015-05-05
- 发明人: Nicole Auth , Petra Spies , Rainer Becker , Thorsten Hofmann , Klaus Edinger
- 申请人： Nicole Auth , Petra Spies , Rainer Becker , Thorsten Hofmann , Klaus Edinger
- 申请人地址： DE Jena
- 专利权人： Carl Zeiss SMS GmbH
- 当前专利权人： Carl Zeiss SMS GmbH
- 当前专利权人地址： DE Jena
- 代理机构： Fish & Richardson P.C.
- 优先权： DE102008037943 20080814
- 国际申请： PCT/EP2009/005885 WO 20090813
- 国际公布： WO2010/017987 WO 20100218
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/3065 ; H01L21/311 ; H01L21/3213
摘要：
The invention relates to a method for electron beam induced etching of a material (100, 200) with the method steps providing at least one etching gas at a position of the material (100, 200) at which an electron beam impacts on the material (100, 200) and simultaneously providing at least one passivation gas which is adapted for slowing down or inhibiting a spontaneous etching by the at least one etching gas.
公开/授权文献
- US20110183444A1 METHOD FOR ELECTRON BEAM INDUCED ETCHING 公开/授权日：2011-07-28
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