- 专利标题： Magnetoresistive element and method of manufacturing the same
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申请号： US13584293申请日： 2012-08-13
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公开(公告)号： US09028909B2公开(公告)日： 2015-05-12
- 发明人: Hideaki Fukuzawa , Shuichi Murakami , Hiromi Yuasa , Yoshihiko Fuji
- 申请人： Hideaki Fukuzawa , Shuichi Murakami , Hiromi Yuasa , Yoshihiko Fuji
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Nixon & Vanderhye, P.C.
- 优先权： JP2008-019366 20080130
- 主分类号： H01F10/30
- IPC分类号： H01F10/30 ; G01R33/09 ; H01L43/08 ; B82Y10/00 ; B82Y25/00 ; G01R33/04 ; G11B5/39 ; G11C11/16 ; H01L27/22 ; H01L43/10 ; H01L43/12
摘要：
A magnetoresistive element includes a magnetoresistive film including a magnetization pinned layer, a magnetization free layer, an intermediate layer arranged between the magnetization pinned layer and the magnetization free layer, a cap layer arranged on the magnetization pinned layer or on the magnetization free layer, and a functional layer arranged in the magnetization pinned layer, in the magnetization free layer, in the interface between the magnetization pinned layer and the intermediate layer, in the interface between the intermediate layer and the magnetization free layer, or in the interface between the magnetization pinned layer or the magnetization free layer and the cap layer, and a pair of electrodes which pass a current perpendicularly to a plane of the magnetoresistive film, in which the functional layer is formed of a layer including nitrogen and a metal material containing 5 atomic % or more of Fe.
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