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    BLOOD-PRESSURE SENSOR
    2.
    发明申请
    BLOOD-PRESSURE SENSOR 审中-公开
    血压传感器

    公开(公告)号：US20110295128A1

    公开(公告)日：2011-12-01

    申请号：US13045759

    申请日：2011-03-11

    申请人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Alexander Devin Giddings ,  Michiko Hara ,  Shuichi Murakami

    发明人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Alexander Devin Giddings ,  Michiko Hara ,  Shuichi Murakami

    IPC分类号： A61B5/021

    CPC分类号： A61B5/02141 ,  A61B5/0004 ,  A61B5/021 ,  A61B5/6824 ,  A61B5/6833 ,  A61B2560/0214 ,  A61B2562/028 ,  G01L9/16 ,  G01L19/06 ,  G01L19/069

    摘要： A blood-pressure sensor includes a substrate, a first electrode, a magnetization fixed layer, a nonmagnetic layer, a magnetization free layer, and a second electrode. The substrate is bent to generate a tensile stress at least in a first direction. The first electrode is provided on the substrate. The magnetization fixed layer has magnetization to be fixed in a second direction, and is provided on the substrate. The nonmagnetic layer is provided on the magnetization fixed layer. The magnetization free layer has a magnetization direction which is different from the first direction and from a direction perpendicular to the first direction. The second electrode is provided on the magnetization free layer.

    摘要翻译： 血压传感器包括基板，第一电极，磁化固定层，非磁性层，磁化自由层和第二电极。 弯曲基板至少在第一方向上产生拉伸应力。 第一电极设置在基板上。 磁化固定层具有在第二方向上固定的磁化，并且设置在基板上。 非磁性层设置在磁化固定层上。 磁化自由层具有不同于第一方向和与第一方向垂直的方向的磁化方向。 第二电极设置在无磁化层上。

    Magnetoresistive element and method of manufacturing the same
    3.
    发明申请
    Magnetoresistive element and method of manufacturing the same 有权
    磁阻元件及其制造方法

    公开(公告)号：US20090190262A1

    公开(公告)日：2009-07-30

    申请号：US12320668

    申请日：2009-01-30

    申请人： Shuichi Murakami ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Yoshihiko Fuji

    发明人： Shuichi Murakami ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Yoshihiko Fuji

    IPC分类号： G11B5/127 ,  G11B5/48 ,  B05D3/00

    CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B2005/3996 ,  G11C11/161 ,  H01L27/228 ,  H01L43/10 ,  H01L43/12

    摘要： A magnetoresistive element includes a magnetoresistive film including a magnetization pinned layer, a magnetization free layer, an intermediate layer arranged between the magnetization pinned layer and the magnetization free layer, a cap layer arranged on the magnetization pinned layer or on the magnetization free layer, and a functional layer formed of an oxygen- or nitrogen-containing material and arranged in the magnetization pinned layer, or in the magnetization free layer, and a pair of electrodes which pass a current perpendicularly to a plane of the magnetoresistive film, in which a crystalline orientation plane of the functional layer is different from a crystalline orientation plane of its upper or lower adjacent layer.

    摘要翻译： 磁阻元件包括磁阻膜，其包括磁化被钉扎层，磁化自由层，布置在磁化钉扎层和磁化自由层之间的中间层，布置在磁化钉扎层或磁化自由层上的盖层，以及 由含氧或含氮材料形成并布置在磁化固定层中或在无磁化层中的功能层和一对电极，其垂直于磁阻膜的平面通过电流，其中晶体 功能层的取向平面与其上部或下部相邻层的结晶取向平面不同。

    Method of manufacturing magnetoresistive element
    4.
    发明授权
    Method of manufacturing magnetoresistive element 失效
    制造磁阻元件的方法

    公开(公告)号：US08685491B2

    公开(公告)日：2014-04-01

    申请号：US13186389

    申请日：2011-07-19

    申请人： Akihiko Takeo ,  Yoshihiko Fuji ,  Hiromi Yuasa ,  Michiko Hara ,  Shuichi Murakami ,  Hideaki Fukuzawa

    发明人： Akihiko Takeo ,  Yoshihiko Fuji ,  Hiromi Yuasa ,  Michiko Hara ,  Shuichi Murakami ,  Hideaki Fukuzawa

    IPC分类号： G11B5/48

    CPC分类号： G11B5/3903 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3983 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/303 ,  H01F41/325 ,  H01L43/12 ,  Y10T428/1129

    摘要： According to one embodiment, a method of manufacturing a magnetoresistive element includes a layered structure and a pair of electrodes, the layered structure including a cap layer, a magnetization pinned layer, a magnetization free layer, a spacer layer and a functional layer provided in the magnetization pinned layer, between the magnetization pinned layer and the spacer layer, between the spacer layer and the magnetization free layer, in the magnetization free layer, or between the magnetization free layer and the cap layer and including an oxide, the method including forming a film including a base material of the functional layer, performing an oxidation treatment on the film using a gas containing oxygen in a form of at least one selected from the group consisting of molecule, ion, plasma and radical, and performing a reduction treatment using a reducing gas on the film after the oxidation treatment.

    摘要翻译： 根据一个实施例，制造磁阻元件的方法包括层状结构和一对电极，所述层叠结构包括盖层，磁化固定层，磁化自由层，间隔层和功能层 在磁化被钉扎层和间隔层之间，在间隔层和磁化自由层之间，在磁化自由层中，或在磁化自由层和覆盖层之间并包括氧化物的磁化钉扎层，该方法包括形成 膜，其包括功能层的基材，使用含有选自分子，离子，等离子体和自由基中的至少一种形式的含氧气体，对膜进行氧化处理，并使用 在氧化处理后还原气膜。

    MAGNETO-RESISTANCE EFFECT DEVICE, AND MAGNETIC RECORDER
    6.
    发明申请
    MAGNETO-RESISTANCE EFFECT DEVICE, AND MAGNETIC RECORDER 审中-公开
    磁阻效应器件和磁记录器

    公开(公告)号：US20120229936A1

    公开(公告)日：2012-09-13

    申请号：US13481317

    申请日：2012-05-25

    申请人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Michiko Hara ,  Shuichi Murakami

    发明人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Michiko Hara ,  Shuichi Murakami

    IPC分类号： G11B5/39 ,  H01L29/82

    CPC分类号： G11B5/39 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3906 ,  G11B5/398 ,  G11B5/3983 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/325 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    摘要： According to one embodiment, a magneto-resistance effect device includes: a multilayer structure having a cap layer; a magnetization pinned layer; a magnetization free layer provided between the cap layer and the magnetization pinned layer; a spacer layer provided between the magnetization pinned layer and the magnetization free layer; a function layer which is provided in the magnetization pinned layer, between the magnetization pinned layer and the spacer layer, between the spacer layer and the magnetization free layer, in the magnetization free layer, or between the magnetization free layer and the cap layer, the function layer having oxide containing at least one element selected from Zn, In, Sn and Cd, and at least one element selected from Fe, Co and Ni; and a pair of electrodes for applying a current perpendicularly to a film plane of the multilayer structure.

    摘要翻译： 根据一个实施例，磁阻效应器件包括：具有盖层的多层结构; 磁化钉扎层; 设置在所述盖层和所述磁化固定层之间的无磁化层; 设置在磁化固定层和无磁化层之间的间隔层; 设置在磁化被钉扎层，磁化被钉扎层和间隔层之间，在间隔层和无磁化层之间，在磁化自由层中，或在磁化自由层和盖层之间的功能层， 具有含有选自Zn，In，Sn和Cd中的至少一种元素的氧化物的功能层和选自Fe，Co和Ni中的至少一种元素; 以及用于垂直于多层结构的膜平面施加电流的一对电极。

    Magnetoresistive element and method of manufacturing the same
    8.
    发明授权
    Magnetoresistive element and method of manufacturing the same 有权
    磁阻元件及其制造方法

    公开(公告)号：US08184408B2

    公开(公告)日：2012-05-22

    申请号：US12320668

    申请日：2009-01-30

    申请人： Shuichi Murakami ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Yoshihiko Fuji

    发明人： Shuichi Murakami ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Yoshihiko Fuji

    IPC分类号： G11B5/39 ,  H01L29/82

    CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B2005/3996 ,  G11C11/161 ,  H01L27/228 ,  H01L43/10 ,  H01L43/12

    摘要： A magnetoresistive element includes a magnetoresistive film including a magnetization pinned layer, a magnetization free layer, an intermediate layer arranged between the magnetization pinned layer and the magnetization free layer, a cap layer arranged on the magnetization pinned layer or on the magnetization free layer, and a functional layer formed of an oxygen- or nitrogen-containing material and arranged in the magnetization pinned layer, or in the magnetization free layer, and a pair of electrodes which pass a current perpendicularly to a plane of the magnetoresistive film, in which a crystalline orientation plane of the functional layer is different from a crystalline orientation plane of its upper or lower adjacent layer.

    摘要翻译： 磁阻元件包括磁阻膜，其包括磁化被钉扎层，磁化自由层，布置在磁化钉扎层和磁化自由层之间的中间层，布置在磁化钉扎层或磁化自由层上的盖层，以及 由含氧或含氮材料形成并布置在磁化固定层中或在无磁化层中的功能层和一对电极，其垂直于磁阻膜的平面通过电流，其中晶体 功能层的取向平面不同于其上部或下部相邻层的结晶取向平面。

    STRAIN SENSOR ELEMENT AND BLOOD PRESSURE SENSOR
    9.
    发明申请
    STRAIN SENSOR ELEMENT AND BLOOD PRESSURE SENSOR 有权
    应变传感器元件和血压传感器

    公开(公告)号：US20120079887A1

    公开(公告)日：2012-04-05

    申请号：US13110392

    申请日：2011-05-18

    申请人： Alexander Devin Giddings ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Hiromi Yuasa ,  Michiko Hara ,  Shuichi Murakami

    发明人： Alexander Devin Giddings ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Hiromi Yuasa ,  Michiko Hara ,  Shuichi Murakami

    IPC分类号： G01B7/16

    CPC分类号： A61B5/021 ,  A61B5/02108 ,  G01B7/24 ,  G01L1/125

    摘要： A strain sensor element comprises a laminated film which has a magnetic free layer, a spacer layer, and a magnetic reference layer. The free layer has a variable magnetization direction and a out-of-plane magnetization direction. The reference layer has a variable magnetization direction which is pinned more strongly than the magnetization of the free layer. The spacer layer provided between the free layer and the reference layer. A pair of electrodes is provided with a plane of the laminated film. A substrate is provided with either of the pair electrodes and can be strained. The rotation angle of the magnetization of the free layer is different from the rotation angle of the magnetization of the reference layer when the substrate is distorted. Electrical resistance is changed depending on the magnetization angle between the free layer and the reference layer, which allows the element to operate as a strain sensor.

    摘要翻译： 应变传感器元件包括具有无磁性层，间隔层和磁性参考层的层压膜。 自由层具有可变的磁化方向和面外磁化方向。 参考层具有可变的磁化方向，该自由层的磁化强度比自由层的磁化强。 间隔层设置在自由层和参考层之间。 一对电极设置有层叠膜的平面。 基板设置有对电极中的任一个并且可以变形。 当衬底失真时，自由层的磁化的旋转角度与参考层的磁化的旋转角度不同。 电阻根据自由层和参考层之间的磁化角度而改变，这允许元件作为应变传感器工作。