发明授权
- 专利标题： Resistive switching memories
- 专利标题（中）： 电阻式切换存储器
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申请号： US13462659申请日： 2012-05-02
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公开(公告)号： US09029829B1公开(公告)日： 2015-05-12
- 发明人: Juan Pablo Saenz Echeverry , Deepak Kamalanathan
- 申请人： Juan Pablo Saenz Echeverry , Deepak Kamalanathan
- 申请人地址： US CA Sunnyvale
- 专利权人： Adesto Technologies Corporation
- 当前专利权人： Adesto Technologies Corporation
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L27/24
- IPC分类号： H01L27/24 ; G11C5/06
摘要：
A memory cell includes a first resistive switching device having a first terminal and a second terminal, a switching device having a first terminal and a second terminal, and an access device having a first access terminal and a second access terminal. The first access terminal is coupled to the first terminal of the first resistive switching device and the first terminal of the switching device.