发明授权
- 专利标题: Capacitive coupling plasma processing apparatus
- 专利标题(中): 电容耦合等离子体处理装置
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申请号: US13278228申请日: 2011-10-21
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公开(公告)号: US09038566B2公开(公告)日: 2015-05-26
- 发明人: Shinji Himori , Tatsuo Matsudo
- 申请人: Shinji Himori , Tatsuo Matsudo
- 申请人地址: JP Tokyo
- 专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2005-102954 20050331
- 主分类号: H01J7/24
- IPC分类号: H01J7/24 ; H05B31/26 ; C23C16/00 ; H01L21/306 ; C23F1/00 ; H01J37/32
摘要:
A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are disposed opposite each other. The second electrode includes a plurality of conductive segments separated from each other and facing the first electrode. An RF power supply is configured to apply an RF power to the first electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma by the RF electric field. A DC power supply is configured to apply a DC voltage to at least one of the segments of the second electrode.
公开/授权文献
- US20120037315A1 CAPACITIVE COUPLING PLASMA PROCESSING APPARATUS 公开/授权日:2012-02-16