公开(公告)号：US20060221540A1

公开(公告)日：2006-10-05

申请号：US11392811

申请日：2006-03-30

申请人： Shinji Himori ,  Tatsuo Matsudo

发明人： Shinji Himori ,  Tatsuo Matsudo

IPC分类号： H01T23/00

CPC分类号： H01J37/32082 ,  H01J37/32091 ,  H01J37/32532 ,  H01J37/32568

摘要： A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are disposed opposite each other. The second electrode includes a plurality of conductive segments separated from each other and facing the first electrode. An RF power supply is configured to apply an RF power to the first electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma by the RF electric field. A DC power supply is configured to apply a DC voltage to at least one of the segments of the second electrode.

公开(公告)号：US20090047795A1

公开(公告)日：2009-02-19

申请号：US12192388

申请日：2008-08-15

申请人： Tatsuo MATSUDO ,  Shinji Himori ,  Noriaki Imai ,  Takeshi Ohse ,  Jun Abe ,  Takayuki Katsunuma

发明人： Tatsuo MATSUDO ,  Shinji Himori ,  Noriaki Imai ,  Takeshi Ohse ,  Jun Abe ,  Takayuki Katsunuma

IPC分类号： H01L21/306 ,  H01L21/3065 ,  H01L21/31

CPC分类号： H01L21/3065 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32165

摘要： A plasma processing apparatus includes a first radio frequency (RF) power supply unit for applying a first RF power for generating a plasma from a processing gas to at least one of a first and a second electrode which are disposed facing each other in an evacuable processing chamber. The first RF power supply unit is controlled by a control unit so that a first phase at which the first RF power has a first amplitude for generating a plasma and a second phase at which the first RF power has a second amplitude for generating substantially no plasma are alternately repeated at predetermined intervals.

摘要翻译： 一种等离子体处理装置包括：第一射频（RF）电源单元，用于将第一和第二电极中的至少一个施加于处理气体中产生等离子体，所述第一和第二电极在排气处理中相互面对地设置; 房间。 所述第一RF电源单元由控制单元控制，使得所述第一RF功率具有用于产生等离子体的第一幅度的第一相位和所述第一RF功率具有第二幅度以用于基本上不产生等离子体的第二相位 以预定间隔交替重复。

公开(公告)号：US20060081337A1

公开(公告)日：2006-04-20

申请号：US11292368

申请日：2005-12-02

申请人： Shinji Himori ,  Kimihiro Higuchi ,  Tatsuo Matsudo ,  Etsuo Iijima ,  Hiroharu Ito ,  Shoichiro Matsuyama ,  Noriaki Imai ,  Kazuya Nagaseki

发明人： Shinji Himori ,  Kimihiro Higuchi ,  Tatsuo Matsudo ,  Etsuo Iijima ,  Hiroharu Ito ,  Shoichiro Matsuyama ,  Noriaki Imai ,  Kazuya Nagaseki

IPC分类号： C23F1/00 ,  C23C14/00

CPC分类号： H01J37/32091 ,  H01J2237/2001

摘要： A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode serving as a cathode electrode, and a second electrode grounded to serve as an anode electrode are disposed opposite each other. An RF power supply is disposed to supply an RF power to the first electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma. The target substrate is supported by a support member between the first and second electrodes such that a process target surface thereof faces the second electrode. The second electrode includes a conductive counter surface facing the first electrode and exposed to the plasma generation region.

摘要翻译： 电容耦合等离子体处理装置包括被配置为具有真空气氛的处理室和被配置为将处理气体供应到室中的处理气体供给部。 在室中，用作阴极的第一电极和接地以用作阳极的第二电极彼此相对地设置。 设置RF电源以向第一电极提供RF功率以在第一和第二电极之间的等离子体产生区域内形成RF电场，以将处理气体转化为等离子体。 目标基板由第一和第二电极之间的支撑构件支撑，使得其工艺目标表面面向第二电极。 第二电极包括面向第一电极并暴露于等离子体产生区域的导电计数器表面。

公开(公告)号：US09038566B2

公开(公告)日：2015-05-26

申请号：US13278228

申请日：2011-10-21

申请人： Shinji Himori ,  Tatsuo Matsudo

发明人： Shinji Himori ,  Tatsuo Matsudo

IPC分类号： H01J7/24 ,  H05B31/26 ,  C23C16/00 ,  H01L21/306 ,  C23F1/00 ,  H01J37/32

CPC分类号： H01J37/32082 ,  H01J37/32091 ,  H01J37/32532 ,  H01J37/32568

摘要： A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are disposed opposite each other. The second electrode includes a plurality of conductive segments separated from each other and facing the first electrode. An RF power supply is configured to apply an RF power to the first electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma by the RF electric field. A DC power supply is configured to apply a DC voltage to at least one of the segments of the second electrode.

摘要翻译： 电容耦合等离子体处理装置包括被配置为具有真空气氛的处理室和被配置为将处理气体供应到室中的处理气体供给部。 在腔室中，第一电极和第二电极相对设置。 第二电极包括彼此分离并面向第一电极的多个导电段。 RF电源被配置为向第一电极施加RF功率以在第一和第二电极之间的等离子体产生区域内形成RF电场，以便通过RF电场将处理气体转化成等离子体。 DC电源被配置为向第二电极的至少一个段施加DC电压。

公开(公告)号：US08070911B2

公开(公告)日：2011-12-06

申请号：US11392811

申请日：2006-03-30

申请人： Shinji Himori ,  Tatsuo Matsudo

发明人： Shinji Himori ,  Tatsuo Matsudo

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： H01J37/32082 ,  H01J37/32091 ,  H01J37/32532 ,  H01J37/32568

摘要： A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are disposed opposite each other. The second electrode includes a plurality of conductive segments separated from each other and facing the first electrode. An RF power supply is configured to apply an RF power to the first electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma by the RF electric field. A DC power supply is configured to apply a DC voltage to at least one of the segments of the second electrode.

摘要翻译： 电容耦合等离子体处理装置包括被配置为具有真空气氛的处理室和被配置为将处理气体供应到室中的处理气体供给部。 在腔室中，第一电极和第二电极相对设置。 第二电极包括彼此分离并面向第一电极的多个导电段。 RF电源被配置为向第一电极施加RF功率以在第一和第二电极之间的等离子体产生区域内形成RF电场，以便通过RF电场将处理气体转化成等离子体。 DC电源被配置为向第二电极的至少一个段施加DC电压。

公开(公告)号：US20090236043A1

公开(公告)日：2009-09-24

申请号：US12407922

申请日：2009-03-20

申请人： Tatsuo MATSUDO ,  Shinji Himori

发明人： Tatsuo MATSUDO ,  Shinji Himori

IPC分类号： C23F1/08 ,  C23C16/54

CPC分类号： H01L21/3065 ,  H01J37/32091 ,  H01J37/32577 ,  H01J37/32642

摘要： A plasma processing apparatus includes a processing gas supplying unit for supplying a desired processing gas to a processing space between an upper electrode and a lower electrode which are disposed facing each other in an evacuable processing chamber. The plasma processing apparatus further includes a radio frequency (RF) power supply unit for applying an RF power to one of the lower and the upper electrode to generate plasma of the processing gas by RF discharge and an electrically conductive RF ground member which covers a periphery portion of the electrode to which the RF power is applied to receive RF power emitted outwardly in radial directions from the periphery portion of the electrode to which the RF power is applied and send the received RF power to a ground line.

摘要翻译： 等离子体处理装置包括处理气体供给单元，用于将所需的处理气体供给到在可排气处理室中彼此面对地设置的上部电极和下部电极之间的处理空间。 等离子体处理装置还包括射频（RF）电源单元，用于向下电极和上电极之一施加RF功率，以通过RF放电产生处理气体的等离子体，以及覆盖周边的导电RF接地元件 施加RF功率的电极的部分，以接收从RF电源所施加的电极的周边部分沿径向向外发射的RF功率，并将接收到的RF功率发送到接地线。

公开(公告)号：US09202675B2

公开(公告)日：2015-12-01

申请号：US12718627

申请日：2010-03-05

申请人： Shinji Himori ,  Daisuke Hayashi

发明人： Shinji Himori ,  Daisuke Hayashi

IPC分类号： C23F1/08 ,  C23C16/50 ,  H01J37/32

CPC分类号： H01J37/3255 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/32577

摘要： A plasma processing apparatus includes a processing chamber in which a target object is processed by a plasma, a first and a second electrode that are provided in the processing chamber to face each other and have a processing space therebetween, and a high frequency power source that is connected to at least one of the first and the second electrode to supply a high frequency power to the processing chamber. And at least one of the first and the second electrode includes a base formed of a plate-shaped dielectric material and a resistor formed of a metal and provided between the base and the plasma.

摘要翻译： 等离子体处理装置包括处理室，其中目标物体由等离子体处理，第一和第二电极设置在处理室中以彼此面对并具有其间的处理空间;以及高频电源， 连接到第一和第二电极中的至少一个，以向处理室提供高频电力。 并且第一和第二电极中的至少一个包括由板状电介质材料形成的基底和由金属形成并设置在基底和等离子体之间的电阻器。

公开(公告)号：US08568606B2

公开(公告)日：2013-10-29

申请号：US12750015

申请日：2010-03-30

申请人： Takeshi Ohse ,  Shinji Himori ,  Jun Abe ,  Norikazu Yamada

发明人： Takeshi Ohse ,  Shinji Himori ,  Jun Abe ,  Norikazu Yamada

IPC分类号： C03C15/00

CPC分类号： H01J37/02 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32165

摘要： A substrate processing method uses a substrate processing apparatus including a chamber for accommodating a substrate, a lower electrode to mount the substrate, a first RF power applying unit for applying an RF power for plasma generation into the chamber, and a second RF power applying unit for applying an RF power for bias to the lower electrode. The RF power for plasma generation is controlled to be intermittently changed by changing an output of the first RF power applying unit at a predetermined timing. If no plasma state or an afterglow state exists in the chamber by a control of the first RF power applying unit, an output of the second RF power applying unit is controlled to be in an OFF state or decreased below an output of the second RF power applying unit when the output of the first RF power applying unit is a set output.

摘要翻译： 基板处理方法使用基板处理装置，其包括用于容纳基板的室，用于安装基板的下电极，用于将用于等离子体产生的RF功率施加到室中的第一RF功率施加单元和第二RF功率施加单元 用于向下电极施加用于偏压的RF功率。 通过在预定的定时改变第一RF功率施加单元的输出来控制等离子体产生的RF功率间歇地改变。 如果通过第一RF功率施加单元的控制在腔室中不存在等离子体状态或余辉状态，则第二RF功率施加单元的输出被控制为处于OFF状态或降低到低于第二RF功率的输出 当第一RF功率施加单元的输出为设定输出时，施加单元。

公开(公告)号：US08284538B2

公开(公告)日：2012-10-09

申请号：US11835743

申请日：2007-08-08

申请人： Shinji Himori ,  Shoichiro Matsuyama ,  Atsushi Matsuura ,  Hiroshi Inazumachi ,  Mamoru Kosakai ,  Yukio Miura ,  Keigo Maki

发明人： Shinji Himori ,  Shoichiro Matsuyama ,  Atsushi Matsuura ,  Hiroshi Inazumachi ,  Mamoru Kosakai ,  Yukio Miura ,  Keigo Maki

IPC分类号： H01L21/687

CPC分类号： H01L21/6833

摘要： An electrostatic chuck device includes an electrostatic chuck section, a metal base section, and a dielectric plate. The electrostatic chuck section has a substrate, a main surface of which serves as a mounting surface for a plate-like sample, an electrostatic-adsorption inner electrode built in the substrate, and a power supply terminal for applying a DC voltage to the electrostatic-adsorption inner electrode. Here, a dielectric plate is fixed to a concave portion formed in the metal base section. The dielectric plate and the electrostatic chuck section are adhesively bonded to each other with an insulating adhesive bonding layer interposed therebetween. The dielectric plate and the concave portion are adhesively bonded to each other with a conductive adhesive bonding layer interposed therebetween, the volume resistivity of which is 1.0×10−2 Ωcm or less.

摘要翻译： 静电吸盘装置包括静电吸盘部，金属基部和电介质板。 静电吸盘部具有基板，其主面作为板状试样的安装面，内置于基板的静电吸附内部电极，以及向静电吸引部施加直流电压的电源端子， 吸附内电极。 这里，电介质板被固定到形成在金属基部中的凹部。 电介质板和静电卡盘部分之间插入绝缘粘合剂粘合层彼此粘合。 电介质板和凹部之间以导电性粘合剂层粘合地结合，其体积电阻率为1.0×10-2＆OHgr·cm以下。

公开(公告)号：US08178444B2

公开(公告)日：2012-05-15

申请号：US12363992

申请日：2009-02-02

申请人： Chishio Koshimizu ,  Taichi Hirano ,  Masanobu Honda ,  Shinji Himori

发明人： Chishio Koshimizu ,  Taichi Hirano ,  Masanobu Honda ,  Shinji Himori

IPC分类号： H01L21/311 ,  H01L21/302

CPC分类号： H01L21/67109 ,  H01J37/32009 ,  H01J37/3255 ,  H01J37/32724 ,  H01L21/67248 ,  H01L21/6831

摘要： A substrate processing method that can eliminate unevenness in the distribution of plasma. The method is for a substrate processing apparatus that has a processing chamber in which a substrate is housed, a mounting stage that is disposed in the processing chamber and on which the substrate is mounted, and an electrode plate that is disposed in the processing chamber such as to face the mounting stage, the electrode plate being made of silicon and connected to a radio-frequency power source, and carries out plasma processing on the substrate. In the plasma processing, the temperature of the electrode plate is measured, and based on the measured temperature, the temperature of the electrode plate is maintained lower than a critical temperature at which the specific resistance value of the silicon starts changing.

摘要翻译： 能够消除等离子体分布不均匀的基板处理方法。 该方法是用于具有容纳基板的处理室的基板处理装置，设置在处理室中并安装有基板的安装台以及设置在处理室中的电极板 为了面对安装台，电极板由硅制成并连接到射频电源，并对基片执行等离子体处理。 在等离子体处理中，测量电极板的温度，并且基于测量的温度，电极板的温度保持低于硅的比电阻值开始变化的临界温度。