发明授权
US09040327B2 Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes
有权
Al（x）Ga（1-x）不含氮包覆的非极性III族氮化物基激光二极管和发光二极管
- 专利标题： Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes
- 专利标题（中）： Al（x）Ga（1-x）不含氮包覆的非极性III族氮化物基激光二极管和发光二极管
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申请号： US13495231申请日： 2012-06-13
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公开(公告)号： US09040327B2公开(公告)日： 2015-05-26
- 发明人: Daniel F. Feezell , Mathew C. Schmidt , Kwang-Choong Kim , Robert M. Farrell , Daniel A. Cohen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
- 申请人： Daniel F. Feezell , Mathew C. Schmidt , Kwang-Choong Kim , Robert M. Farrell , Daniel A. Cohen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
- 申请人地址： US CA Oakland
- 专利权人： The Regents of the University of California
- 当前专利权人： The Regents of the University of California
- 当前专利权人地址： US CA Oakland
- 代理机构： Gates & Cooper LLP
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L29/06 ; H01L33/32 ; B82Y20/00 ; H01L33/16 ; H01L33/02 ; H01L33/06 ; H01S5/32 ; H01S5/343
摘要：
A method for fabricating AlxGa1-xN-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.
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