公开(公告)号：US09130119B2

公开(公告)日：2015-09-08

申请号：US12001227

申请日：2007-12-11

申请人： Steven P. DenBaars ,  Mathew C. Schmidt ,  Kwang Choong Kim ,  James S. Speck ,  Shuji Nakamura

发明人： Steven P. DenBaars ,  Mathew C. Schmidt ,  Kwang Choong Kim ,  James S. Speck ,  Shuji Nakamura

IPC分类号： H01L33/00 ,  H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/16 ,  H01L33/22 ,  H01S5/22 ,  H01S5/223 ,  H01S5/34 ,  H01S5/343

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/16 ,  H01L33/22 ,  H01S5/2201 ,  H01S5/2231 ,  H01S5/3404 ,  H01S5/34333

摘要： An (Al, Ga, In)N light emitting device, such as a light emitting diode (LED), in which high light generation efficiency is realized by fabricating the device on non-polar or semi-polar III-Nitride crystal geometries. Because non-polar and semi-polar emitting devices have significantly lower piezoelectric effects than c-plane emitting devices, higher efficiency emitting devices at higher current densities can be realized.

摘要翻译： 一种（Al，Ga，In）N发光器件，例如发光二极管（LED），其中通过以非极性或半极性III氮化物晶体几何形状制造器件来实现高发光效率。 因为非极性和半极性发射器件具有比c面发射器件显着更低的压电效应，所以可以实现在更高电流密度下的更高效率的发射器件。

公开(公告)号：US08956896B2

公开(公告)日：2015-02-17

申请号：US13440087

申请日：2012-04-05

申请人： Mathew C. Schmidt ,  Kwang Choong Kim ,  Hitoshi Sato ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

发明人： Mathew C. Schmidt ,  Kwang Choong Kim ,  Hitoshi Sato ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC分类号： H01L21/36 ,  H01L33/00 ,  H01L21/00 ,  B82Y20/00 ,  H01L21/02 ,  H01S5/343

CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01S5/34333 ,  H01S2304/04

摘要： A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes.

摘要翻译： 一种器件生长和p接触处理的方法，其产生非极性III族氮化物发光二极管和激光二极管的改善的性能。 使用低缺陷密度衬底或模板的关键组件，厚量子阱，低温p型III族氮化物生长技术和用于电极的透明导电氧化物。

公开(公告)号：US08436389B2

公开(公告)日：2013-05-07

申请号：US13482851

申请日：2012-05-29

申请人： Kwang Choong Kim ,  Won Cheol Seo ,  Dae Won Kim ,  Dae Sung Kal ,  Kyung Hee Ye

发明人： Kwang Choong Kim ,  Won Cheol Seo ,  Dae Won Kim ,  Dae Sung Kal ,  Kyung Hee Ye

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/18 ,  H01L33/20 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. Nitride semiconductor layers are disposed on a Gallium Nitride substrate having an upper surface. The upper surface is a non-polar or semi-polar crystal and forms an intersection angle with respect to a c-plane. The nitride semiconductor layers may be patterned to form light emitting cells separated from one another. When patterning the light emitting cells, the substrate may be partially removed in separation regions between the light emitting cells to form recess regions. The recess regions are filled with an insulating layer, and the substrate is at least partially removed by using the insulating layer.

摘要翻译： 本发明涉及具有多个非极性发光单元的发光器件及其制造方法。 氮化物半导体层设置在具有上表面的氮化镓衬底上。 上表面是非极性或半极性的晶体，相对于c面形成交叉角。 氮化物半导体层可以被图案化以形成彼此分离的发光单元。 当图案化发光单元时，可以在发光单元之间的分离区域中部分地去除衬底，以形成凹陷区域。 凹部区域填充有绝缘层，并且通过使用绝缘层至少部分地去除衬底。

公开(公告)号：US20120256158A1

公开(公告)日：2012-10-11

申请号：US13495231

申请日：2012-06-13

申请人： Daniel F. Feezell ,  Mathew C. Schmidt ,  Kwang Choong Kim ,  Robert M. Farrell ,  Daniel A. Cohen ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Daniel F. Feezell ,  Mathew C. Schmidt ,  Kwang Choong Kim ,  Robert M. Farrell ,  Daniel A. Cohen ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01L33/04

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/06 ,  H01L33/16 ,  H01S5/3211 ,  H01S5/34333

摘要： A method for fabricating AlxGa1-xN-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.

摘要翻译： 一种制造Al x Ga 1-x N不包覆非极性III族氮化物基激光二极管或发光二极管的方法。 由于在非极性晶面中没有极化场，这些非极性器件具有用作光波导的厚量子阱，以有效地将光学模式限制在有源区，并且不需要含Al波导覆层。

公开(公告)号：US20120199809A1

公开(公告)日：2012-08-09

申请号：US13440087

申请日：2012-04-05

申请人： Mathew C. Schmidt ,  Kwang Choong Kim ,  Hitoshi Sato ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

发明人： Mathew C. Schmidt ,  Kwang Choong Kim ,  Hitoshi Sato ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC分类号： H01L33/04

CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01S5/34333 ,  H01S2304/04

摘要： A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes.

摘要翻译： 一种器件生长和p接触处理的方法，其产生非极性III族氮化物发光二极管和激光二极管的改善的性能。 使用低缺陷密度衬底或模板的关键组件，厚量子阱，低温p型III族氮化物生长技术和用于电极的透明导电氧化物。

公开(公告)号：US20100163900A1

公开(公告)日：2010-07-01

申请号：US12624011

申请日：2009-11-23

申请人： Won Cheol SEO ,  Kwang Choong KIM ,  Kyung Hee YE

发明人： Won Cheol SEO ,  Kwang Choong KIM ,  Kyung Hee YE

IPC分类号： H01L33/00 ,  H01L21/30

CPC分类号： H01L33/007 ,  H01L27/156

摘要： Disclosed are a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. This method comprises preparing a first substrate of sapphire or silicon carbide having an upper surface with an r-plane, an a-plane or an m-plane. The first substrate has stripe-shaped anti-growth patterns on the upper surface thereof, and recess regions having sidewalls of a c-plane between the anti-growth patterns. Nitride semiconductor layers are grown on the substrate having the recess regions, and the nitride semiconductor layers are patterned to form the light emitting cells separated from one another. Accordingly, there is provided a light emitting device having non-polar light emitting cells with excellent crystal quality.

摘要翻译： 公开了具有多个非极性发光单元的发光器件及其制造方法。 该方法包括制备具有上表面的蓝宝石或碳化硅的第一衬底，其具有r面，a面或m面。 第一衬底在其上表面上具有条状的抗生长图案，以及在抗生长图案之间具有c面侧壁的凹陷区域。 在具有凹陷区域的衬底上生长氮化物半导体层，并且将氮化物半导体层图案化以形成彼此分离的发光元件。 因此，提供了具有优异的晶体质量的非极性发光单元的发光器件。

公开(公告)号：US20090242870A1

公开(公告)日：2009-10-01

申请号：US12193588

申请日：2008-08-18

申请人： Gyu Beom KIM ,  Sang Joon LEE ,  Chang Suk HAN ,  Kwang Choong KIM

发明人： Gyu Beom KIM ,  Sang Joon LEE ,  Chang Suk HAN ,  Kwang Choong KIM

IPC分类号： H01L33/00

CPC分类号： H01L33/04 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/3063 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04

摘要： Disclosed herein is a light emitting device. The light emitting device includes an n-type nitride semiconductor layer; an active layer on the n-type semiconductor layer, an AlN/GaN layer of a super lattice structure formed by alternately growing an AlN layer and a GaN layer on the active layer, and a p-type nitride semiconductor layer on the AlN/GaN layer of the super lattice structure. At least one of the AlN layer and the GaN layer is doped with a p-type dopant. A method for manufacturing the light emitting device is also provided.

公开(公告)号：US20080198881A1

公开(公告)日：2008-08-21

申请号：US12030124

申请日：2008-02-12

申请人： Robert M. Farrell ,  Mathew C. Schmidt ,  Kwang Choong Kim ,  Hisashi Masui ,  Daniel F. Feezell ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Robert M. Farrell ,  Mathew C. Schmidt ,  Kwang Choong Kim ,  Hisashi Masui ,  Daniel F. Feezell ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01S5/06

CPC分类号： H01S5/32341 ,  B82Y20/00 ,  H01S5/10 ,  H01S5/20 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/3404 ,  H01S5/34333

摘要： Optical gain of a nonpolar or semipolar Group-III nitride diode laser is controlled by orienting an axis of light propagation in relation to an optical polarization direction or crystallographic orientation of the diode laser. The axis of light propagation is substantially perpendicular to the mirror facets of the diode laser, and the optical polarization direction is determined by the crystallographic orientation of the diode laser. To maximize optical gain, the axis of light propagation is oriented substantially perpendicular to the optical polarization direction or crystallographic orientation.

摘要翻译： 非极性或半极性III族氮化物二极管激光器的光学增益通过相对于二极管激光器的光学偏振方向或晶体取向定向光传播的轴来控制。 光传播的轴线基本上垂直于二极管激光器的镜面，并且光学偏振方向由二极管激光器的晶体取向决定。 为了使光学增益最大化，光传播的轴线基本上垂直于光学偏振方向或结晶取向。

公开(公告)号：US20080191192A1

公开(公告)日：2008-08-14

申请号：US12030117

申请日：2008-02-12

申请人： Daniel F. Feezell ,  Matthew C. Schmidt ,  Kwang Choong Kim ,  Robert M. Farrell ,  Daniel A. Cohen ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Daniel F. Feezell ,  Matthew C. Schmidt ,  Kwang Choong Kim ,  Robert M. Farrell ,  Daniel A. Cohen ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/06 ,  H01L33/16 ,  H01S5/3211 ,  H01S5/34333

摘要： A method for fabricating AlxGa1-xN-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.

摘要翻译： 一种用于制造Al x Ga 1-x N不包覆非极性III族氮化物基激光二极管或发光二极管的方法。 由于在非极性晶面中没有极化场，这些非极性器件具有用作光波导的厚量子阱，以有效地将光学模式限制在有源区，并且不需要含Al波导覆层。

公开(公告)号：US08588260B2

公开(公告)日：2013-11-19

申请号：US12908463

申请日：2010-10-20

申请人： Robert M. Farrell ,  Mathew C. Schmidt ,  Kwang Choong Kim ,  Hisashi Masui ,  Daniel F. Feezell ,  James S. Speck ,  Stephen P. DenBaars ,  Shuji Nakamura

发明人： Robert M. Farrell ,  Mathew C. Schmidt ,  Kwang Choong Kim ,  Hisashi Masui ,  Daniel F. Feezell ,  James S. Speck ,  Stephen P. DenBaars ,  Shuji Nakamura

IPC分类号： H01S3/10

CPC分类号： H01S5/32341 ,  B82Y20/00 ,  H01S5/10 ,  H01S5/20 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/3404 ,  H01S5/34333

摘要： Optical gain of a nonpolar or semipolar Group-III nitride diode laser is controlled by orienting an axis of light propagation in relation to an optical polarization direction or crystallographic orientation of the diode laser. The axis of light propagation is substantially perpendicular to the mirror facets of the diode laser, and the optical polarization direction is determined by the crystallographic orientation of the diode laser. To maximize optical gain, the axis of light propagation is oriented substantially perpendicular to the optical polarization direction or crystallographic orientation.

摘要翻译： 非极性或半极性III族氮化物二极管激光器的光学增益通过相对于二极管激光器的光学偏振方向或晶体取向定向光传播的轴来控制。 光传播的轴线基本上垂直于二极管激光器的镜面，并且光学偏振方向由二极管激光器的晶体取向决定。 为了使光学增益最大化，光传播的轴线基本上垂直于光学偏振方向或结晶取向。